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P-Channel MOSFET. DMP1011LFV Datasheet

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P-Channel MOSFET. DMP1011LFV Datasheet






DMP1011LFV MOSFET. Datasheet pdf. Equivalent




DMP1011LFV MOSFET. Datasheet pdf. Equivalent





Part

DMP1011LFV

Description

P-Channel MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMP1011LFV Datasheet


Diodes DMP1011LFV

DMP1011LFV; .


Diodes DMP1011LFV

.


Diodes DMP1011LFV

.

Part

DMP1011LFV

Description

P-Channel MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMP1011LFV Datasheet




 DMP1011LFV
DMP1011LFV
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-12V
RDS(ON) Max
11.7m@ VGS = -4.5V
18.6m@ VGS = -2.5V
ID Max
TC = +25°C
-19A
-15A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features and Benefits
Low RDS(ON) Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products (PowerDI® )
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI3333-8 (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072grams (Approximate)
PowerDI3333-8 (Type UX)
Top View
Bottom View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP1011LFV-7
PowerDI3333-8 (Type UX)
2,000/Tape & Reel
DMP1011LFV-13
PowerDI3333-8 (Type UX)
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TN4418
T41 = Product Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 for 2017)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
1 of 7
www.diodes.com
March 2017
© Diodes Incorporated




 DMP1011LFV
DMP1011LFV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.3mH
Avalanche Energy (Note 7) L = 0.3mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
-12
-6
-13
-10
-19
-15
3
70
24
86
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.05
118
83.5
2.16
57
40.3
11.7
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (TJ = +25°C)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -6V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-12
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
-0.6
Typ
9.8
14.6
-0.8
913
458
53
1.85
9.5
7.1
1.4
1.1
6.3
2.6
14.4
3.9
13.5
2.5
Max
-1
-100
-1.2
11.7
18.6
-1.0
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -9.6V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ VGS = -4.5V, ID = -12A
VGS = -2.5V, ID = -9A
V VGS = 0V, IS = -16A
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = -6V, ID = -12A
ns
VDS = -6V, VGS = -4.5V,
RL = 1Ω, Rg = 4.7Ω, ID =-12A
ns IF = -12A, dI/dt = 100A/μs
nC IF = -12A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
2 of 7
www.diodes.com
March 2017
© Diodes Incorporated




 DMP1011LFV
30.0
25.0
20.0
15.0
10.0
VGS = -2.0V
VGS = -2.5V
VGS = -3.0V
VGS = -1.5V
VGS=-4.0V
VGS = -4.5V
5.0
0.0
0
VGS = -1.2V
VGS = -1.0V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.025
0.02
0.015
VGS = -2.5V
0.01
0.005
VGS = -4.5V
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
DMP1011LFV
30
VDS = -5V
25
20
15
10
5
0
0
0.15
TJ=150
TJ=125
TJ=85
TJ=25
TJ=-55
0.5 1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
0.12
0.09
ID = -12A
0.06
0.03
ID = -9A
0
123456
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.02
0.018
VGS = -4.5V
0.016
0.014
15012585
0.012
0.01
0.008
25
0.006
-55
0.004
0.002
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
1.5
VGS = -2.5V, ID = -9A
1.2
VGS = -4.5V, ID = -12A
0.9
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
3 of 7
www.diodes.com
March 2017
© Diodes Incorporated



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