DatasheetsPDF.com

P-Channel MOSFET. DMP1011UCB9 Datasheet

DatasheetsPDF.com

P-Channel MOSFET. DMP1011UCB9 Datasheet






DMP1011UCB9 MOSFET. Datasheet pdf. Equivalent




DMP1011UCB9 MOSFET. Datasheet pdf. Equivalent





Part

DMP1011UCB9

Description

P-Channel MOSFET



Feature


AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTI IUOCONTN DMP1011UCB9 P-CHANNEL ENHANCE MENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -8V RDS(on) 8.2mΩ Qg 8.1nC Qgd 1.8nC I D -10A Description This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-ef ficiency power trans.
Manufacture

Diodes

Datasheet
Download DMP1011UCB9 Datasheet


Diodes DMP1011UCB9

DMP1011UCB9; fer. It uses Chip-Scale Package (CSP) to increase power density by combining lo w thermal impedance with minimal RDS(on ) per footprint area. Features LD-MOS Technology with the Lowest Figure of M erit: -RDS(on) = 8.2mΩ to Minimize On -State Losses -Qg = 8.1nC for Ultra-Fas t Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footpr int 1.5mm × 1.5mm H.


Diodes DMP1011UCB9

eight = 0.60mm for Low Profile ESD = 6k V HBM Protection of Gate Totally Lead- Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green ” Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability .


Diodes DMP1011UCB9

.

Part

DMP1011UCB9

Description

P-Channel MOSFET



Feature


AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTI IUOCONTN DMP1011UCB9 P-CHANNEL ENHANCE MENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -8V RDS(on) 8.2mΩ Qg 8.1nC Qgd 1.8nC I D -10A Description This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-ef ficiency power trans.
Manufacture

Diodes

Datasheet
Download DMP1011UCB9 Datasheet




 DMP1011UCB9
DMP1011UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS
-8V
RDS(on)
8.2mΩ
Qg
8.1nC
Qgd
1.8nC
ID
-10A
Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to
minimize on-state losses and switch ultra-fast, making it ideal for
high-efficiency power transfer. It uses Chip-Scale Package (CSP) to
increase power density by combining low thermal impedance with
minimal RDS(on) per footprint area.
Features
LD-MOS Technology with the Lowest Figure of Merit:
-RDS(on) = 8.2mto Minimize On-State Losses
-Qg = 8.1nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.60mm for Low Profile
ESD = 6kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Battery Management
Load Switch
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
U-WLB1515-9
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP1011UCB9-7
Case
U-WLB1515-9
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1515-9
NX = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2012
Z
Jan Feb
12
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
1 of 6
www.diodes.com
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
July 2015
© Diodes Incorporated




 DMP1011UCB9
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10µs, duty cycle 1%)
Continuous Gate Current
Symbol
VDSS
VGSS
ID
ID
IDM
IS
ISM
IG
DMP1011UCB9
Value
-8
-6
-10
-8
-7.4
-6.0
-50
-2
-15
-0.5
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
0.89
1.57
+142.1
+80.5
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate to Source Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
@TC = +25°C
BVDSS
BVSGS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-8
-6
-0.4
Typ
-0.8
8.2
10
11
16.8
-0.7
6.3
18.5
817
595
269
1.9
8.1
0.9
1.8
6.2
22.6
30.1
22.7
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45cm2), 2oz (0.071mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-1
-100
-1.1
10
13
14
-1
1,060
770
350
10.5
10
48
Unit
Test Condition
V VGS = 0V, ID = -250μA
V VDS = 0V, ID = -250μA
μA VDS = -4.0V, VGS = 0V
nA VGS = -4.0V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2A
mΩ VGS = -3.0V, ID = -2A
VGS = -2.5V, ID = -2A
S VDS = -4V, ID = -2A
V VGS = 0V, IS = -2A
nC Vdd = -5V, IF = -2A,
ns di/dt = 200A/μs
pF
pF
VDS = -4V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V,
nC ID = -2A
ns
ns VDD = -4V, VGS = -4.5V,
ns IDS = -2A, RG = 10Ω,
ns
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
2 of 6
www.diodes.com
July 2015
© Diodes Incorporated




 DMP1011UCB9
DMP1011UCB9
20.0
18.0
16.0
14.0
12.0
10.0
8.0
VGS = -4.5V
VGS = -4.0V
VGS = -2.5V
VGS = -2.0V
VGS = -1.5V
6.0
4.0
2.0
0.0
0
VGS = -1.2V
VGS = -1.0V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
0.1
0.09
0.08
0.07
0.06
0.05
0.04
ID = -2.0A
0.03
0.02
0.01
0
123456
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical Transfer Characteristic
1
10
VDS = -5.0V
8
6
TA = 150C
4
TA = 125C
TA = 85C
TA = 25C
TA = -55C
2
0
0 0.5
1 1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
2
VGS = -2.5V
1.5 ID = -1A
1
VGS = -4.5V
ID = -3A
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 4 On-Resistance Variation with Temperature
10
0.8 -ID = 250µA
-ID = 1mA
0.6
0.4
8
6
TA = 150C
TA = 125C
TA = 85C
4
TA = 25C
TA = -55C
2
0.2
-50
-25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 5 Gate Threshold Variation
vs. Ambient Temperature
150
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 6 Diode Forward Voltage vs. Current
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
3 of 6
www.diodes.com
July 2015
© Diodes Incorporated



Recommended third-party DMP1011UCB9 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)