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P-Channel MOSFET. DMP1096UCB4 Datasheet

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P-Channel MOSFET. DMP1096UCB4 Datasheet






DMP1096UCB4 MOSFET. Datasheet pdf. Equivalent




DMP1096UCB4 MOSFET. Datasheet pdf. Equivalent





Part

DMP1096UCB4

Description

P-Channel MOSFET



Feature


DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE M OSFET Product Summary (Typ. @ VGS = -4 .5V, TA = +25°C) VDSS -12V RDS(on) 8 5mΩ Qg 3.7nC Qgd 0.6nC ID -2.6A De scription This new generation MOSFET is designed to minimize the on-state resi stance (RDS(on)) and yet maintain super ior switching performance, making it id eal for high efficiency power managemen t applications. Appl.
Manufacture

Diodes

Datasheet
Download DMP1096UCB4 Datasheet


Diodes DMP1096UCB4

DMP1096UCB4; ications Battery Management Load Switc h Battery Protection Features LD-MOS Technology with the Lowest Figure of M erit: RDS(on) = 85mΩ to Minimize On-S tate Losses Qg = 3.7nC for Ultra-Fast S witching Vgs(th) = -0.6V typ. for a Lo w Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Lo w Profile ESD = 3kV HBM Protection of Gate Totally Lead-Fr.


Diodes DMP1096UCB4

ee & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechani cal Data Case: U-WLB1010-4 Terminal C onnections: See Diag .


Diodes DMP1096UCB4

.

Part

DMP1096UCB4

Description

P-Channel MOSFET



Feature


DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE M OSFET Product Summary (Typ. @ VGS = -4 .5V, TA = +25°C) VDSS -12V RDS(on) 8 5mΩ Qg 3.7nC Qgd 0.6nC ID -2.6A De scription This new generation MOSFET is designed to minimize the on-state resi stance (RDS(on)) and yet maintain super ior switching performance, making it id eal for high efficiency power managemen t applications. Appl.
Manufacture

Diodes

Datasheet
Download DMP1096UCB4 Datasheet




 DMP1096UCB4
DMP1096UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS
-12V
RDS(on)
85mΩ
Qg
3.7nC
Qgd
0.6nC
ID
-2.6A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Battery Management
Load Switch
Battery Protection
Features
LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 85mto Minimize On-State Losses
Qg = 3.7nC for Ultra-Fast Switching
Vgs(th) = -0.6V typ. for a Low Turn-On Potential
CSP with Footprint 1.0mm × 1.0mm
Height = 0.62mm for Low Profile
ESD = 3kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1010-4
Terminal Connections: See Diagram Below
Weight: 0.005 grams (Approximate)
U-WLB1010-4
DD
ESD PROTECTED TO 3kV
GS
Top View
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
Case
Packaging
DMP1096UCB4-7
U-WLB1010-4
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
BW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
2013
A
May
5
2014
B
Jun Jul
67
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct Nov
ON
2018
F
Dec
D
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
1 of 6
www.diodes.com
May 2015
© Diodes Incorporated




 DMP1096UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
DMP1096UCB4
Value
-12
-5
-2.6
-2.1
-2.4
-1.9
-10
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.82
150
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
BVGSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qg(th)
tD(on)
tr
tD(off)
tf
Min
-12
-6.0
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-0.6
85
97
127
4
-0.6
251
359
70
3.7
0.4
0.6
0.2
17.6
26.9
37.5
32.3
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-
-1
-500
-1.0
102
116
152
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250μA
V VDS = 0V, IG = -250μA
A VDS = -9.6V, VGS = 0V
nA VGS = -5V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -500mA
mΩ VGS = -2.5V, ID = -500mA
VGS = -1.5V, ID = -500mA
S VDS = -6V, ID = -500mA
V VGS = 0V, IS = -500mA
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
nC VGS = -4.5V, VDS = -6V,
ID = -500mA
ns
VDS = -6V, VGS = -2.5V,
RG = 20Ω, ID = -500mA
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated




 DMP1096UCB4
5.0
VGS = -4.5V
4.0 VGS = -3.0V
VGS = -2.5V
3.0 VGS = -2.0V
2.0 VGS = -1.5V
1.0
0
0
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
1.6
VGS = -1.2V
0.3 0.6 0.9 1.2
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
1.5
VGS = -2.5V
VGS = -4.5V
12 3456 7
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
8
1.4
VGS = -2.5V
1.2 ID = -0.5A
VGS = -4.5V
1.0 ID = -1.0A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
5
4 VDS = -5V
DMP1096UCB4
3
2
1
0
0
0.14
0.12
0.10
0.08
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1.0 1.5 2.0
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2.5
VGS = -4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.06
0
0.16
1 23 4
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
5
0.14
0.12
0.10
VGS = -2.5V
ID = -0.5A
0.08
0.06
VGS = -4.5V
ID = -1.0A
0.04
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMP1096UCB4
Document number: DS31954 Rev. 8 - 2
3 of 6
www.diodes.com
May 2015
© Diodes Incorporated



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