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P-Channel MOSFET. DMP2039UFDE4 Datasheet

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P-Channel MOSFET. DMP2039UFDE4 Datasheet






DMP2039UFDE4 MOSFET. Datasheet pdf. Equivalent




DMP2039UFDE4 MOSFET. Datasheet pdf. Equivalent





Part

DMP2039UFDE4

Description

P-Channel MOSFET



Feature


DMP2039UFDE4 25V P-CHANNEL ENHANCEMENT M ODE MOSFET Product Summary V(BR)DSS - 25V RDS(on) max 26mΩ @ VGS = -4.5V 40 mΩ @ VGS = -1.8V ID TA = 25°C -7.3 - 6.0 Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RD S(on)) and yet maintain superior switch ing performance, making it ideal for hi gh efficiency power m.
Manufacture

Diodes

Datasheet
Download DMP2039UFDE4 Datasheet


Diodes DMP2039UFDE4

DMP2039UFDE4; anagement applications. • Load Switchi ng • Battery Management Application Power Management Functions Features and Benefits • Low RDS(ON) – ensur es on state losses are minimized • 0. 4mm profile – ideal for low profile a pplications • PCB footprint of 4mm2 Low Input Capacitance • ESD Protec ted Gate • Lead, Halogen, and Antimon y Free, RoHS Compliant (Note 1) • "Green.


Diodes DMP2039UFDE4

" Device (Note 2) • Qualified to AEC-Q 101 Standards for High Reliability Mech anical Data • Case: X2-DFN2020-6 • Case Material: Molded Plastic, “Green ” Molding Compound. UL Flammability C lassification Rating 94V-0 • Moistu .


Diodes DMP2039UFDE4

.

Part

DMP2039UFDE4

Description

P-Channel MOSFET



Feature


DMP2039UFDE4 25V P-CHANNEL ENHANCEMENT M ODE MOSFET Product Summary V(BR)DSS - 25V RDS(on) max 26mΩ @ VGS = -4.5V 40 mΩ @ VGS = -1.8V ID TA = 25°C -7.3 - 6.0 Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RD S(on)) and yet maintain superior switch ing performance, making it ideal for hi gh efficiency power m.
Manufacture

Diodes

Datasheet
Download DMP2039UFDE4 Datasheet




 DMP2039UFDE4
DMP2039UFDE4
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-25V
RDS(on) max
26mΩ @ VGS = -4.5V
40mΩ @ VGS = -1.8V
ID
TA = 25°C
-7.3
-6.0
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Load Switching
Battery Management Application
Power Management Functions
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized
0.4mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Input Capacitance
ESD Protected Gate
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
X2-DFN2020-6
Drain
ESD PROTECTED
Bottom View
Top View
Bottom View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMP2039UFDE4-7
Case
X2-DFN2020-6
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
PD = Product Type Marking Code
YM = Date Code Marking
PD Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
March 2012
© Diodes Incorporated




 DMP2039UFDE4
DMP2039UFDE4
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<5s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<5s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
Value
-25
±8
-7.3
-5.8
-9.2
-7.3
-6.0
-4.7
-7.6
-6.0
-60
-2.0
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = 25°C
TA = 70°C
Steady state
t<5s
TA = 25°C
TA = 70°C
Steady state
t<5s
Steady state
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.69
0.44
182
113
2.4
1.5
52
33
9.1
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-25
-0.4
Typ
19
24
29
35
14
-0.7
2530
203
177
9.1
28.2
48.7
3.2
5.0
15.1
23.5
137.6
Max
-1
±10
-1.0
26
33
40
70
-1.0
Unit Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -25V, VGS = 0V
µA VGS = ±8.0V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -6.4A
mΩ VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = -1.5V, ID = -1.5A
mS VDS = -5V, ID = -4A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = -15V, ID = -4.0A
nS VDD = -15V, VGS = -4.5V, RG = 1,
ID = -4.0A
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated




 DMP2039UFDE4
20
VGS = 8.0V
VGS = 4.5V
16 VGS = 2.5V
VGS = 2.0V
12
VGS = 1.8V
8
VGS = 1.5V
4 VGS = 1.2V
0
0
0.06
1234
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
5
0.05
0.04
0.03
0.02
0.01
0
1
1.7
2 3 4 5 6 7 8 9 10
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
VDS = -5.0V
15
DMP2039UFDE4
10
5
0
0
0.04
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1.0 1.5 2.0 2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3.0
0.03
VGS = -4.5V
TA = 150°C
0.02
0.01
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
0.06
4 8 12 16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.05
0.04
0.03
VGS = -2.5V
ID = -5A
0.02
0.01
VGS = -4.5V
ID = -10A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
3 of 6
www.diodes.com
March 2012
© Diodes Incorporated



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