Document
DMP2040UFDF
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) max 32mΩ @ VGS = -4.5V 53mΩ @ VGS = -2.5V
ID max TC = +25°C
-13A
-10A
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Battery Management Application Power Management Functions DC-DC Converters
Mechanical Data
Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type F)
D
Top View
Pin1 Bottom View
Pin Out Bottom View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMP2040UFDF-7 DMP2040UFDF-13
Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F)
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMP2040UFDF
Document number: DS38984 Rev. 2 - 2
1 of 8 www.diodes.com
January 2020
© Diodes Incorporated
DMP2040UFDF
Marking Information
Site 1
4D = Product Type Marking Code
YM
YM = Date Code Marking
4D
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2016
…
2020 2021 2022 2023 2024 2025 2026 2027 2028 2029
D
…
H
I
J
K
L
M
N
O
P
R
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Site 2
4OD 7
YW X
4D = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday)
Date Code Key Year Code
Week Code
Internal Code Code
2016 6
Sun T
…
2020
…
0
1-26 A-Z
Mon U
2021 1
2022 2
Tue V
2023 3
2024 4
27-52 a-z
Wed W
2025 5
2026 6
Thu X
2027 7
2028 8
2029 9
53 z
Fri
Sat
Y
Z
DMP2040UFDF
Document number: DS38984 Rev. 2 - 2
2 of 8 www.diodes.com
January 2020
© Diodes Incorporated
DMP2040UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 7) VGS = -4.5V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 6) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH
Steady State
Steady State
TA = +25°C TA = +70°C TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS IAS
EAS
Value -20 ±12
-6.1 -4.9
-13 -10 -35
-2.0 -17 14
Unit V V
A
A
A A A mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
TA = +25°C Steady State
t<10s
TA = +25°C Steady State
t<10s Steady State
Symbol PD RθJA PD RθJA RθJC
TJ, TSTG
Value 0.8 149 95 1.8 70 45 16
-55 to +150
Unit W
°C/W W
°C/W °C/W
°C
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Rever.