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P-Channel MOSFET. DMP2042UCB4 Datasheet

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P-Channel MOSFET. DMP2042UCB4 Datasheet






DMP2042UCB4 MOSFET. Datasheet pdf. Equivalent




DMP2042UCB4 MOSFET. Datasheet pdf. Equivalent





Part

DMP2042UCB4

Description

P-Channel MOSFET



Feature


DMP2042UCB4 P-CHANNEL ENHANCEMENT MODE M OSFET Product Summary (Typ @VGS = -4.5 V, TA = +25°C) BVDSS -20V RDS(ON) 37 mΩ @ VGS = -4.5V 49mΩ @ VGS = -2.5V ID -4.6A -3.7A Features and Benefits Low QG & QGD Small Footprint Low Pr ofile 0.62mm Height ESD Protected Up T o 3KV Totally Lead-Free & Fully RoHS C ompliant (Notes 1 & 2) Halogen and Ant imony Free. “Green” Dev.
Manufacture

Diodes

Datasheet
Download DMP2042UCB4 Datasheet


Diodes DMP2042UCB4

DMP2042UCB4; ice (Note 3) Qualified to AEC-Q101 Stan dards for High Reliability Description and Applications This new generation M OSFET is designed to minimize the on-st ate resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power mana gement applications. Mechanical Data Case: U-WLB1010-4 (Type C) Terminal Co nnections: See Dia.


Diodes DMP2042UCB4

gram Below Battery Management Load Sw itch Battery Protection U-WLB1010-4 ( Type C) ESD PROTECTED TO 3kV Top View Equivalent Circuit Ordering Informati on (Note 4) Notes: Part Number DMP204 2UCB4-7 Case U-WLB .


Diodes DMP2042UCB4

.

Part

DMP2042UCB4

Description

P-Channel MOSFET



Feature


DMP2042UCB4 P-CHANNEL ENHANCEMENT MODE M OSFET Product Summary (Typ @VGS = -4.5 V, TA = +25°C) BVDSS -20V RDS(ON) 37 mΩ @ VGS = -4.5V 49mΩ @ VGS = -2.5V ID -4.6A -3.7A Features and Benefits Low QG & QGD Small Footprint Low Pr ofile 0.62mm Height ESD Protected Up T o 3KV Totally Lead-Free & Fully RoHS C ompliant (Notes 1 & 2) Halogen and Ant imony Free. “Green” Dev.
Manufacture

Diodes

Datasheet
Download DMP2042UCB4 Datasheet




 DMP2042UCB4
DMP2042UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ @VGS = -4.5V, TA = +25°C)
BVDSS
-20V
RDS(ON)
37mΩ @ VGS = -4.5V
49mΩ @ VGS = -2.5V
ID
-4.6A
-3.7A
Features and Benefits
Low QG & QGD
Small Footprint
Low Profile 0.62mm Height
ESD Protected Up To 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: U-WLB1010-4 (Type C)
Terminal Connections: See Diagram Below
Battery Management
Load Switch
Battery Protection
U-WLB1010-4 (Type C)
ESD PROTECTED TO 3kV
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2042UCB4-7
Case
U-WLB1010-4 (Type C)
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2016
D
Jan Feb
12
DMP2042UCB4
Document number: DS38665 Rev. 2 - 2
2A = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
2017
E
Mar
3
2018
F
Apr May
45
2019
G
Jun Jul
67
1 of 7
www.diodes.com
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov Dec
ND
July 2016
© Diodes Incorporated




 DMP2042UCB4
DMP2042UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
ID
IDM
Value
-20
-6
-4.6
-3.7
-16
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.75
165
1.4
87
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Symbol
BVDSS
BVGSS
IDSS
IGSS
Min
-20
-6.0
Typ
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Series Clamp Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Charge
Reverse Recovery Time
VGS(TH)
RDS(ON)
|YFS|
VSD
-0.4
-0.8
37
49
6.6
-0.7
CISS
COSS
CRSS
RG
RC
QG
QGS
QGD
QG(TH)
tD(ON)
tR
tD(OFF)
tF
QRR
tRR
218
148
11
20
5,000
2.5
0.4
0.4
0.2
0.6
0.8
1.4
0.8
2.2
10
Notes:
5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
-1
-100
-1.2
45
65
-
-1.0
Unit Test Condition
V VGS = 0V, ID = -250μA
V VDS = 0V, IG = -250μA
µA VDS = -16V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -4.5V, ID =-1A
VGS = -2.5V, ID = -1A
S VDS = -10V, ID = -1A
V VGS = 0V, IS = -1A
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
f = 1MHz, VGS = 0V, VDS = 0V
nC VGS = -4.5V, VDS = -10V,
ID =-1A
µs
VDS = -10V, VGS = -2.5V,
RG = 10, ID = -1A
nC VDD = -10V, IF = -1.0A,
ns di/dt =100A/μs
DMP2042UCB4
Document number: DS38665 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated




 DMP2042UCB4
DMP2042UCB4
10.0
8.0
6.0
VGS = -8.0V
VGS = -2.0V
VGS=-3.0V
VGS = -4.5V
VGS = -1.8V
10
VDS = -5V
8
6
4.0 4
2.0
0.0
0
0.07
VGS = -1.5V
VGS = -1.2V
0.4 0.8 1.2 1.6
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.06
0.05
0.04
VGS = -2.5V
VGS = -4.5V
0.03
2
150
125
85
25
-55
0
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2.2
0.07
0.06
0.05
VGS = -4.5V
150
125
0.04
0.03
0.02
85
25
-55
0.02
1 2 3 4 5 6 7 8 9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.01
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Junction Temperature
1.5 0.08
1.4
1.3 VGS = -2.5V, ID = -1.0A
1.2
1.1
1 VGS = -4.5V, ID = -1.0A
0.9
0.8
0.07
0.06
0.05
VGS = -2.5V, ID = -1.0A
0.04
0.03
VGS = -4.5V, ID = -1.0A
0.7
-50 -25 0 25 50 75 100 125
Figure
5.
OTnJ,-RJUesNisCtTanIOceN
TEMPERATURE ()
Variation with Junction
Temperature
150
0.02
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMP2042UCB4
Document number: DS38665 Rev. 2 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated



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