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P-Channel MOSFET. DMP2088LCP3 Datasheet

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P-Channel MOSFET. DMP2088LCP3 Datasheet






DMP2088LCP3 MOSFET. Datasheet pdf. Equivalent




DMP2088LCP3 MOSFET. Datasheet pdf. Equivalent





Part

DMP2088LCP3

Description

P-Channel MOSFET



Feature


DMP2088LCP3 20V P-CHANNEL ENHANCEMENT MO DE MOSFET Product Summary BVDSS -20V RDS(ON) Max 88mΩ @ VGS = -8V 105mΩ @ VGS = -4.5V ID TA = +25°C -2.9A -1 .8A Description This new generation MO SFET has been designed to minimize the footprint in handheld and Mobile applic ation. It can be used to replace many s mall signals MOSFET with as really smal l footprint. Applicati.
Manufacture

Diodes

Datasheet
Download DMP2088LCP3 Datasheet


Diodes DMP2088LCP3

DMP2088LCP3; ons Battery Management Load Switch Ba ttery Protection Handheld and Mobile A pplication Features and Benefits Low Qg & Qgd Small Footprint Low Profile 0.30mm Height Totally Lead-Free & Full y RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. “Green” Device ( Note 3) Qualified to AEC-Q101 Standard s for High Reliability Mechanical Data Case: X2-DSN1006-3 T.


Diodes DMP2088LCP3

erminal Connections: See Diagram Below Terminals: Finish – Matte Tin Anneale d over Copper Pillar e3 X2-DSN1006-3 Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Numb er DMP2088LCP3-7 .


Diodes DMP2088LCP3

.

Part

DMP2088LCP3

Description

P-Channel MOSFET



Feature


DMP2088LCP3 20V P-CHANNEL ENHANCEMENT MO DE MOSFET Product Summary BVDSS -20V RDS(ON) Max 88mΩ @ VGS = -8V 105mΩ @ VGS = -4.5V ID TA = +25°C -2.9A -1 .8A Description This new generation MO SFET has been designed to minimize the footprint in handheld and Mobile applic ation. It can be used to replace many s mall signals MOSFET with as really smal l footprint. Applicati.
Manufacture

Diodes

Datasheet
Download DMP2088LCP3 Datasheet




 DMP2088LCP3
DMP2088LCP3
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-20V
RDS(ON) Max
88mΩ @ VGS = -8V
105mΩ @ VGS = -4.5V
ID
TA = +25°C
-2.9A
-1.8A
Description
This new generation MOSFET has been designed to minimize the
footprint in handheld and Mobile application. It can be used to replace
many small signals MOSFET with as really small footprint.
Applications
Battery Management
Load Switch
Battery Protection
Handheld and Mobile Application
Features and Benefits
Low Qg & Qgd
Small Footprint
Low Profile 0.30mm Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1& 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DSN1006-3
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Pillar e3
X2-DSN1006-3
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2088LCP3-7
Case
X2-DSN1006-3
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
B = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
2016
D
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMP2088LCP3
Document number: DS38475 Rev. 2 - 2
1of 7
www.diodes.com
July 2016
© Diodes Incorporated




 DMP2088LCP3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -8V
Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)
Human Body Model (HBM)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
V(ESD)
DMP2088LCP3
Value
-20
-12
-2.9
-2.4
-1.8
-1.4
-15
4
Unit
V
V
A
A
A
kV
Thermal Characteristics
Characteristic
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.57
217
1.13
110
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Symbol Min
BVDSS
IDSS
IGSS
-20
Typ
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at VTH
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS(TH)
RDS(ON)
|Yfs|
VSD
QRR
tRR
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
Qg(th)
tD(ON)
tR
tD(OFF)
tF
-0.7
9
-1.0
73
90
143
266
3.4
-0.75
1.0
5.7
121
66
4.3
18
1.1
0.17
0.22
0.12
6.3
2.8
17
6
Notes:
5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP2088LCP3
Document number: DS38475 Rev. 2 - 2
2of 7
www.diodes.com
Max
-100
-50
-1.2
88
105
174
750
-1.0
160
36
1.5
12
34
Unit
Test Condition
V VGS = 0V, ID = -250μA
nA VDS = -16V, VGS = 0V
nA VGS = -12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -8V, ID = -0.5A
VGS = -4.5V, ID = -0.5A
VGS = -2.5V, ID = -0.5A
VGS = -1.8V, ID = -0.1A
S VDS = -10V, ID = -0.5A
V VGS = 0V, IS = -0.5A
nC VDD = -10V, IF = -1A,
ns di/dt = 100A/μs
pF VDS = -10V, VGS = 0V,
f = 1.0MHz
Ω f = 1MHz, VGS = 0V, VDS = 0V
nC VGS = -4.5V, VDS = -10V,
ID = -0.5A
ns
VDS = -10V, VGS = -4.5V,
RG = 2Ω, ID = -0.5A
July 2016
© Diodes Incorporated




 DMP2088LCP3
20.0
16.0
VGS = -8.0V
VGS = -4.5V
12.0
8.0
4.0
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V VGS = -2.0V
VGS = -1.8V VGS = -1.5V
0.0
0
0.18
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.16
0.14
VGS = -2.5V
0.12
0.1
VGS = -4.5V
0.08
0.06
VGS = -8.0V
0.04
0 2 4 6 8 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
1.6
VGS = -4.5V, ID = -500mA
1.4
1.2
10
VDS = -5V
8
6
DMP2088LCP3
-55oC
25oC
85oC
125oC
150oC
4
2
0
01234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.14
VGS = -8V
0.12
150oC
125oC
0.1
0.08
0.06
85oC
25oC
-55oC
0.04
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs Drain Current
and Junction Temperature
0.14
0.12
0.1
VGS = -4.5V, ID = -500mA
1 0.08
VGS = -8V, ID = -500mA
VGS = -8V, ID = -500mA
0.8 0.06
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 5. On-Resistance Variation with Junction
Temperature
0.04
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMP2088LCP3
Document number: DS38475 Rev. 2 - 2
3of 7
www.diodes.com
July 2016
© Diodes Incorporated



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