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P-Channel MOSFET. DMP2160U Datasheet

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P-Channel MOSFET. DMP2160U Datasheet






DMP2160U MOSFET. Datasheet pdf. Equivalent




DMP2160U MOSFET. Datasheet pdf. Equivalent





Part

DMP2160U

Description

P-Channel MOSFET



Feature


DMP2160U P-CHANNEL ENHANCEMENT MODE MOSF ET Product Summary V(BR)DSS -20V RDS (ON) max 75mΩ @ VGS = -4.5V 140mΩ @ VGS = -1.8V ID max TA = +25°C -3.3A -2.4A Features and Benefits Low On-Re sistance Very Low Gate Threshold Volta ge VGS(th) ≤ 1V Low Input Capacitanc e Fast Switching Speed Low Input/Outp ut Leakage Totally Lead-Free & Fully R oHS Compliant (Notes 1 & .
Manufacture

Diodes

Datasheet
Download DMP2160U Datasheet


Diodes DMP2160U

DMP2160U; 2) Halogen and Antimony Free. “Green Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability Des cription and Applications This MOSFET h as been designed to minimize the on-sta te resistance (RDS(on)) and yet maintai n superior switching performance, makin g it ideal for high efficiency power ma nagement applications. Battery Chargin g Power Management Fu.


Diodes DMP2160U

nctions DC-DC Converters Portable Powe r Adaptors Mechanical Data Case: SOT2 3 Case Material: Molded Plastic, “Gr een” Molding Compound. UL Flammabilit y Classification Rating 94V-0 Moisture Sensiti .


Diodes DMP2160U

.

Part

DMP2160U

Description

P-Channel MOSFET



Feature


DMP2160U P-CHANNEL ENHANCEMENT MODE MOSF ET Product Summary V(BR)DSS -20V RDS (ON) max 75mΩ @ VGS = -4.5V 140mΩ @ VGS = -1.8V ID max TA = +25°C -3.3A -2.4A Features and Benefits Low On-Re sistance Very Low Gate Threshold Volta ge VGS(th) ≤ 1V Low Input Capacitanc e Fast Switching Speed Low Input/Outp ut Leakage Totally Lead-Free & Fully R oHS Compliant (Notes 1 & .
Manufacture

Diodes

Datasheet
Download DMP2160U Datasheet




 DMP2160U
DMP2160U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
75m@ VGS = -4.5V
140m@ VGS = -1.8V
ID max
TA = +25°C
-3.3A
-2.4A
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage VGS(th) 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q 101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
Top View
Drain
Gate
Source
Internal Schematic
D
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMP2160U-7
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
DMF
DMF = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
2008
V
Month
Code
Jan Feb
12
Shanghai A/T Site
2009
W
Mar
3
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
2013
A
Jul Aug Sep
78
9
2014
B
2015
C
Oct Nov Dec
OND
DMP2160U
Document number: DS31586 Rev. 8 - 2
1 of 5
www.diodes.com
February 2014
© Diodes Incorporated




 DMP2160U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current
TA = +25C
TA = +70C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-3.3
-2.6
-13
DMP2160U
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
90
22
-55 to +150
Units
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
-20

-0.4
Static Drain-Source On-Resistance
RDS (ON)
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
gFS
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

Notes:
5. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t 10 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Typ

-0.6
60
73
92
7
627
64
53
44.9
6.5
0.9
1.5
12.5
10.3
46.5
22.2
Max
-1.0
100
800
-0.9
75
96
140
-1.0

Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -16V, VGS = 0V
nA
VGS = 8V, VDS = 0V
VGS = 12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -1.5A
mVGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1.2A
S VDS = -10V, ID = -1.5A
V VGS = 0V, IS = -1.0A
pF
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V, ID = -3A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 10, RG = 1.0, ID = -1A
ns
DMP2160U
Document number: DS31586 Rev. 8 - 2
2 of 5
www.diodes.com
February 2014
© Diodes Incorporated




 DMP2160U
10
VGS = 3.0V
8 VGS = 3.0V
VGS = 3.0V
VGS = 2.5V
6 VGS = 2.0V
10
VDS = -5V
8
6
DMP2160U
4
VGS = 1.5V
2
0
01 2 3 45
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1.6
1.4
VGS = -2.5V
ID = -2A
1.2 VGS = -4.5V
ID = -4.5A
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance Variation with Temperature
4
2
0
0
1,200
1,000
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1 1.5 2 2.5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
f = 1MHz
VGS = 0V
800
600
400
Ciss
200
Coss
0 Crss
04
8 12 16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
20
1
0.9
0.8
0.7
0.6 ID = 1mA
0.5
ID = 250µA
0.4
0.3
0.2
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
10
8
6
4 TA = 25°C
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 6 Diode Forward Voltage vs. Current
DMP2160U
Document number: DS31586 Rev. 8 - 2
3 of 5
www.diodes.com
February 2014
© Diodes Incorporated



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