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P-Channel MOSFET. DMP2022LSS Datasheet

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P-Channel MOSFET. DMP2022LSS Datasheet






DMP2022LSS MOSFET. Datasheet pdf. Equivalent




DMP2022LSS MOSFET. Datasheet pdf. Equivalent





Part

DMP2022LSS

Description

single P-Channel MOSFET



Feature


Features • Low On-Resistance • 13m @ VGS = -10V • 16mΩ @ VGS = -4.5V • 22mΩ @ VGS = -2.5V • Low Gate Threshold Voltage • Low Input Capacit ance • Fast Switching Speed • Low I nput/Output Leakage • Lead Free By De sign/RoHS Compliant (Note 2) • "Green " Device (Note 4) • Qualified to AEC- Q101 Standards for High Reliability TOP VIEW DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT.
Manufacture

Diodes

Datasheet
Download DMP2022LSS Datasheet


Diodes DMP2022LSS

DMP2022LSS; MODE MOSFET Mechanical Data • Case: S O-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flamma bility Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD -020 • Terminals Connections: See Dia gram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solder able per MIL-STD-202, Method 208 • Ma rking Information: See Page 4 • Or.


Diodes DMP2022LSS

dering Information: See Page 4 • Weigh t: 0.072g (approximate) SO-8 SD SD SD G D TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise sp ecified Drain-Source Voltage Gate-Sour ce Voltage Drain C .


Diodes DMP2022LSS

.

Part

DMP2022LSS

Description

single P-Channel MOSFET



Feature


Features • Low On-Resistance • 13m @ VGS = -10V • 16mΩ @ VGS = -4.5V • 22mΩ @ VGS = -2.5V • Low Gate Threshold Voltage • Low Input Capacit ance • Fast Switching Speed • Low I nput/Output Leakage • Lead Free By De sign/RoHS Compliant (Note 2) • "Green " Device (Note 4) • Qualified to AEC- Q101 Standards for High Reliability TOP VIEW DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT.
Manufacture

Diodes

Datasheet
Download DMP2022LSS Datasheet




 DMP2022LSS
Features
Low On-Resistance
13m@ VGS = -10V
16m@ VGS = -4.5V
22m@ VGS = -2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
TOP VIEW
DMP2022LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
SO-8
SD
SD
SD
GD
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-10
-8
-35
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMP2022LSS
Document number: DS31373 Rev. 5 - 2
1 of 5
www.diodes.com
June 2010
© Diodes Incorporated




 DMP2022LSS
DMP2022LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 6)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
gfs
VSD
Ciss
Coss
Crss
RG
Min
-20
-0.6
-0.5
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
Typ
0.77
8
11
17
28
0.68
2444
594
556
2.0
28.1
56.9
3.4
11.9
7.5
9.9
108.0
76.5
Max
-1
±100
-1.1
13
16
22
-1.2
15
20
216
153
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -10V, ID = -10A
mΩ VGS = -4.5V, ID = -9A
VGS = -2.5V, ID = -8A
S VDS = -10V, ID = -10A
V VGS = 0V, IS = -3A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VGS = 0V VDS = 0V, f = 1MHz
VDS = -10V, VGS = -4.5V, ID = -10A
nC VDS = -10V, VGS = -10V, ID = -10A
VDS = -10V, VGS = -10V, ID = -10A
VDS = -10V, VGS = -10V, ID = -10A
ns
VDD = -15V, ID = -1A, VGS = -10V,
RGEN = 6
30
25
20
15
10
5
0
0 0.5 1.0 1.5 2.0
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
30
VDS = -5V
Pulsed
25
20
15
10
5
0
0.5 1 1.5
2
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.5
DMP2022LSS
Document number: DS31373 Rev. 5 - 2
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated




 DMP2022LSS
DMP2022LSS
1.4
1.3
VGS = -2.5V
ID = -8.0A
1.2
VGS = -4.5V
1.1 ID = -9.0A
VGS = -10V
1.0 ID = -10A
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 3 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
10,000
f = 1MHz
VGS = 0V
1,000
Ciss
Coss
Crss
100
0
10
4 8 12 16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Total Capacitance
20
1
0.1
0.01
VGS = -2.5V
VGS = -3.0V
VGS = -4.5V
0.001
0.1
1
10 100
-ID, DRAIN CURRENT (A)
Fig. 4 On-Resistance vs. Drain Current and Gate Voltage
1.0
0.8 ID = -250µA
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0.1
0.01
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
DMP2022LSS
Document number: DS31373 Rev. 5 - 2
3 of 5
www.diodes.com
June 2010
© Diodes Incorporated



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