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P-Channel MOSFET. DMG1023UV Datasheet

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P-Channel MOSFET. DMG1023UV Datasheet






DMG1023UV MOSFET. Datasheet pdf. Equivalent




DMG1023UV MOSFET. Datasheet pdf. Equivalent





Part

DMG1023UV

Description

Dual P-Channel MOSFET



Feature


Features Dual P-Channel MOSFET Low On- Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra- Small Surface Mount Package ESD Protec ted Up To 3KV Lead Free By Design/RoHS Compliant (Note 1) Halogen and Antimo ny Free "Green" Device (Note 2) Qualif ied to AEC-Q101 Standards for High Reli ability DMG1023UV.
Manufacture

Diodes

Datasheet
Download DMG1023UV Datasheet


Diodes DMG1023UV

DMG1023UV; DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Case: SOT563 Case Mat erial: Molded Plastic, “Green” Mold ing Compound. UL Flammability Classific ation Rating 94V-0 Moisture Sensitivit y: Level 1 per J-STD-020 Terminal Conn ections: See Diagram Below Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.


Diodes DMG1023UV

.006 grams (approximate) SOT563 D2 G1 S1 ESD PROTECTED TO 3kV Top View Bo ttom View S2 G2 D1 Top View Ordering Information (Note 3) Notes: Part Numb er DMG1023UV-7 DMG1023UV-13 Case SOT56 3 SOT563 .


Diodes DMG1023UV

.

Part

DMG1023UV

Description

Dual P-Channel MOSFET



Feature


Features Dual P-Channel MOSFET Low On- Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra- Small Surface Mount Package ESD Protec ted Up To 3KV Lead Free By Design/RoHS Compliant (Note 1) Halogen and Antimo ny Free "Green" Device (Note 2) Qualif ied to AEC-Q101 Standards for High Reli ability DMG1023UV.
Manufacture

Diodes

Datasheet
Download DMG1023UV Datasheet




 DMG1023UV
Features
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Up To 3KV
Lead Free By Design/RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
DMG1023UV
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT563
D2 G1
S1
ESD PROTECTED TO 3kV
Top View
Bottom View
S2 G2 D1
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMG1023UV-7
DMG1023UV-13
Case
SOT563
SOT563
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PA1 YM
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
2008
Code
V
Month
Code
Jan
1
2009
W
Feb
2
2010
X
2011
Y
Mar Apr May
345
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep Oct
9O
2016
D
Nov
N
2017
E
Dec
D
DMG1023UV
Document number: DS31975 Rev. 6 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated




 DMG1023UV
DMG1023UV
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 4) VGS = -4.5V
Pulsed Drain Current (Note 5)
Steady
State
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±6
-1.03
-0.68
-3
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
530
235
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
-20
-
-
-0.5
Static Drain-Source On-Resistance
RDS (ON)
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
-
-
-
-
-
-
-
-
-
-
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Typ
-
-
-
-
0.5
0.7
1.0
-
-
0.9
-0.8
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
Max
-
-100
±2.0
-1.0
0.75
1.05
1.5
20
25
-
-1.2
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250μA
nA VDS = -20V, VGS = 0V
μA VGS = ±4.5V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
Ω VGS = -1.8V, ID = -150mA
VGS = -1.7V, ID = -100mA
VGS = -1.5V, ID = -100mA
S VDS = -10V, ID = -250mA
V VGS = 0V, IS = -150mA
pF
pF
VDS = -16V, VGS = 0V,
f = 1.0MHz
pF
pC
pC VGS = -4.5V, VDS = -10V,
pC ID = -250mA
ns
ns
ns
VDD = -10V, VGS = -4.5V,
RL = 47Ω, RG = 10Ω,
ns ID = -200mA
DMG1023UV
Document number: DS31975 Rev. 6 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated




 DMG1023UV
DMG1023UV
1.5
VGS = -8.0V
1.2
VGS = -4.5V
VGS = -3.0V
0.9 VGS = -2.5V
0.6
VGS = -2.0V
10
8 VDS = -5V
6
4
0.3
0
0
1.6
1.4
VGS = -1.2V
VGS = -1.5V
1 234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
1.2
1.0 VGS = -1.8V
0.8
VGS = -2.5V
0.6
0.4 VGS = -4.5V
0.2
0
0
1.7
0.3 0.6 0.9 1.2
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.5
2
0
0
1.0
0.8
0.6
0.4
0.2
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1 1.5 2 2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
VGS = -4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0 0.3 0.6 0.9 1.2 1.5
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.2
1.5
VGS = -2.5V
1.3 ID = -500mA
1.1
VGS = -4.5V
ID = -1.0A
0.9
0.7
1.0
0.8 VGS = -2.5V
ID = -500mA
0.6
0.4 VGS = -4.5V
ID = -1.0A
0.2
0.5
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG1023UV
Document number: DS31975 Rev. 6 - 2
3 of 6
www.diodes.com
April 2015
© Diodes Incorporated



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