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DMP4015SK3Q Dataheets PDF



Part Number DMP4015SK3Q
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP4015SK3Q DatasheetDMP4015SK3Q Datasheet (PDF)

Product Summary V(BR)DSS -40V RDS(ON) Max 11mΩ @ VGS = -10V 15mΩ @ VGS = -4.5V ID TC = +25°C -35A -30A Green DMP4015SK3Q P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMP4015SK3Q is suitable for automotive applications requiring specific change control; this part is AEC-Q.

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Product Summary V(BR)DSS -40V RDS(ON) Max 11mΩ @ VGS = -10V 15mΩ @ VGS = -4.5V ID TC = +25°C -35A -30A Green DMP4015SK3Q P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMP4015SK3Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: • DC-DC Converters • Power Management Functions • Backlighting Mechanical Data • Case: TO252 (DPAK) • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish—Matte Tin Finish Annealed over Copper Lead- Frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (Approximate) TO252 (DPAK) D Top View D G S Top View Pin-Out Equivalent Circuit Ordering Information (Note 4) Part Number DMP4015SK3Q-13 Compliance Automotive Case TO252 (DPAK) Packaging 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information P4015S YYWW = Manufacturer’s Marking PY4Y0W1W5. S==DPartoedCucotdTeyMpearMkianrgking Code YY = Year (ex: 21 = 2021) WW = Week (01 - 53) DMP4015SK3Q Document number: DS36665 Rev. 6 - 2 1 of 7 www.diodes.com February 2021 © Diodes Incorporated Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 5) VGS = -10V Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 5) Avalanche Current L=0.1mH Avalanche Energy L=0.1mH Steady State Steady State t<10s TC = +25°C TC = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID ID IDM IS IAS EAS DMP4015SK3Q Value -40 ±25 -35 -27 -14 -11 -22 -18 -100 -5.5 -22 242 Units V V A A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range TA = +25°C TA = +70°C Steady State t<10s Steady State Symbol PD RϴJA RϴJC TJ, TSTG Value 3.5 2.2 36 15 4.5 -55 to +150 Units W °C/W °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) |Yfs| VSD Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf Min -40 — — -1.5 — — — — — — — — — — — — — — — Typ — — — -2 7 9 26 -0.7 4,234 1,036 526 7.77 47.5 14.2 13.5 13.2 10 302.7 137.9 Max — -1 ±100 -2.5 11 15 — -1 — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = -250μA µA VDS = -40V, VGS = 0V nA VGS = ±25V, VDS = 0V V VDS = VGS, ID = -250μA mΩ VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A S VDS = -20V, ID = -9.8A V VGS = 0V, IS = -1A pF VDS = -20V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -20V, VGS = -5V ID = -9.8A nS VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMP4015SK3Q Document number: DS36665 Rev. 6 - 2 2 of 7 www.diodes.com February 2021 © Diodes Incorporated -ID, DRAIN C.


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