Document
Product Summary
V(BR)DSS -40V
RDS(ON) Max
11mΩ @ VGS = -10V 15mΩ @ VGS = -4.5V
ID TC = +25°C
-35A
-30A
Green
DMP4015SK3Q
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMP4015SK3Q is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
• DC-DC Converters • Power Management Functions • Backlighting
Mechanical Data
• Case: TO252 (DPAK) • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish—Matte Tin Finish Annealed over Copper Lead-
Frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (Approximate)
TO252 (DPAK)
D
Top View
D
G
S
Top View Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number DMP4015SK3Q-13
Compliance Automotive
Case TO252 (DPAK)
Packaging 2500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P4015S YYWW
= Manufacturer’s Marking PY4Y0W1W5. S==DPartoedCucotdTeyMpearMkianrgking Code YY = Year (ex: 21 = 2021) WW = Week (01 - 53)
DMP4015SK3Q
Document number: DS36665 Rev. 6 - 2
1 of 7 www.diodes.com
February 2021
© Diodes Incorporated
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 5) Avalanche Current L=0.1mH Avalanche Energy L=0.1mH
Steady State Steady State
t<10s
TC = +25°C TC = +70°C
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
ID
IDM IS IAS EAS
DMP4015SK3Q
Value -40 ±25
-35 -27
-14 -11
-22 -18
-100 -5.5 -22 242
Units V V
A
A
A
A A A mJ
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range
TA = +25°C
TA = +70°C Steady State
t<10s Steady State
Symbol PD
RϴJA RϴJC TJ, TSTG
Value 3.5
2.2 36 15 4.5
-55 to +150
Units W
°C/W °C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Symbol
BVDSS IDSS IGSS
VGS(th)
RDS(ON)
|Yfs| VSD
Ciss Coss Crss RG Qg Qgs Qgd tD(on)
tr tD(off)
tf
Min
-40 — —
-1.5 — — — —
— — — — — — — — — — —
Typ
— — —
-2 7 9 26 -0.7
4,234 1,036 526 7.77 47.5 14.2 13.5 13.2
10 302.7 137.9
Max
— -1 ±100
-2.5 11 15 — -1
— — — — — — — — — — —
Unit
Test Condition
V
VGS = 0V, ID = -250μA
µA VDS = -40V, VGS = 0V
nA VGS = ±25V, VDS = 0V
V
VDS = VGS, ID = -250μA
mΩ VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A
S
VDS = -20V, ID = -9.8A
V
VGS = 0V, IS = -1A
pF
VDS = -20V, VGS = 0V f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = -20V, VGS = -5V ID = -9.8A
nS
VGS = -10V, VDD = -20V,
RG = 6Ω, ID = -1A
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
DMP4015SK3Q
Document number: DS36665 Rev. 6 - 2
2 of 7 www.diodes.com
February 2021
© Diodes Incorporated
-ID, DRAIN C.