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P-Channel MOSFET. DMP4013LFG Datasheet

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P-Channel MOSFET. DMP4013LFG Datasheet






DMP4013LFG MOSFET. Datasheet pdf. Equivalent




DMP4013LFG MOSFET. Datasheet pdf. Equivalent





Part

DMP4013LFG

Description

P-Channel MOSFET



Feature


ADVANCE INFORMATION DMP4013LFG 40V P-CH ANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary BVDSS -40V RDS(ON) max 13mΩ @ VGS = -10V 18mΩ @ VGS = - 4.5V ID max TA = +25°C -10.3A -8.8A Features and Benefits Low RDS(ON) – ensures on state losses are minimized. Small form factor thermally efficient package enables higher density end prod ucts. Occupies 33% of th.
Manufacture

Diodes

Datasheet
Download DMP4013LFG Datasheet


Diodes DMP4013LFG

DMP4013LFG; e board area occupied by SO-8, enabling smaller end product. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Descrip tion and Applications This MOSFET is de signed to minimize the on-state resista nce (RDS(ON)) and yet maintain superior switching performance.


Diodes DMP4013LFG

, making it ideal for high-efficiency po wer management applications. Backlight ing Power Management Functions DC-DC Converters Mechanical Data Case: POWE RDI®3333-8 Case Material: Molded Plas tic, "Green" Molding .


Diodes DMP4013LFG

.

Part

DMP4013LFG

Description

P-Channel MOSFET



Feature


ADVANCE INFORMATION DMP4013LFG 40V P-CH ANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary BVDSS -40V RDS(ON) max 13mΩ @ VGS = -10V 18mΩ @ VGS = - 4.5V ID max TA = +25°C -10.3A -8.8A Features and Benefits Low RDS(ON) – ensures on state losses are minimized. Small form factor thermally efficient package enables higher density end prod ucts. Occupies 33% of th.
Manufacture

Diodes

Datasheet
Download DMP4013LFG Datasheet




 DMP4013LFG
DMP4013LFG
40V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
-40V
RDS(ON) max
13mΩ @ VGS = -10V
18m@ VGS = -4.5V
ID max
TA = +25°C
-10.3A
-8.8A
Features and Benefits
Low RDS(ON) ensures on state losses are minimized.
Small form factor thermally efficient package enables higher
density end products.
Occupies 33% of the board area occupied by SO-8, enabling
smaller end product.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI®3333-8
S Pin 1
S
S
G
D
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP4013LFG-7
DMP4013LFG-13
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
POWERDI®3333-8
P13
P13= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMP4013LFG
Document number: DS37205 Rev. 3 - 2
1 of 7
www.diodes.com
July 2015
© Diodes Incorporated




 DMP4013LFG
DMP4013LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-40
±20
-10.3
-8.3
-13.7
-11
80
2.6
34
58
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1
123
69
2.1
60
34
3.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-40
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
-1
Typ
9.4
12.3
-0.7
3,426
283
235
4.7
32.5
68.6
8.2
9.9
5.3
20
126
83
19.5
9.8
Max
-1
±100
-3
13
18
-1.2
Unit
Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ VGS = -10V, ID = -10A
VGS = -4.5V, ID = -8A
V VGS = 0V, IS = -1A
pF
pF VDS = -20V, VGS = 0V,
f = 1MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -20V, ID = -10A
nC
ns
ns VDD = -20V, VGEN = -10V,
ns RG = 3Ω, ID = -10A
ns
nS
nC
IF = -10A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP4013LFG
Document number: DS37205 Rev. 3 - 2
2 of 7
www.diodes.com
July 2015
© Diodes Incorporated




 DMP4013LFG
30.0
25.0
20.0
15.0
VGS = -10V
VGS = -4.5V
VGS = -4.0V
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V
10.0
5.0
VGS = -2.0V
0.0 0
0.016
12 34
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.014
0.012
0.01
VGS = -4.5V
VGS = -10V
0.008
30
VDS = -5.0V
25
DMP4013LFG
20
15
10
5
0
0.5
0.06
0.05
0.04
TA = 150C
TA = 125C
TA = 85C
TA = 25C
TA = -55C
1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
ID = 10A
ID = 8A
0.03
0.02
0.01
0.006
0
0.02
5 10 15 20 25
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.018
VGS = -10V
TA = 150C
0.016
TA = 125C
30
0.014
0.012
0.01
TA = 85C
TA = 25C
0.008
0.006
TA = -55C
0.004
0
5 10 15 20 25
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0
0
1.8
1.6
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
VGS = -10V
ID = -10A
1.4
VGS = -4.5V
ID = -8A
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMP4013LFG
Document number: DS37205 Rev. 3 - 2
3 of 7
www.diodes.com
July 2015
© Diodes Incorporated



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