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P-Channel MOSFET. DMP4015SPS Datasheet

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P-Channel MOSFET. DMP4015SPS Datasheet






DMP4015SPS MOSFET. Datasheet pdf. Equivalent




DMP4015SPS MOSFET. Datasheet pdf. Equivalent





Part

DMP4015SPS

Description

P-Channel MOSFET



Feature


NEW PRODUCT   Green DMP4015SPS 40V P- CHANNEL ENHANCEMENT MODE MOSFET POWERDI ® Product Summary V(BR)DSS -40V RDS (on) max 11mΩ @ VGS = -10V 15mΩ @ V GS = -4.5V ID TA = +25°C -17.0A -14.5 A Features and Benefits 100% Unclampe d Inductive Switch (UIS) Test In Produc tion Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Complian t (Notes 1 & 2) Halogen .
Manufacture

Diodes

Datasheet
Download DMP4015SPS Datasheet


Diodes DMP4015SPS

DMP4015SPS; and Antimony Free. “Green” Device (N ote 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designe d to minimize the onstate resistance (R DS(on)) and yet maintain superior switc hing performance, making it ideal for h igh efficiency power management applica tions. Applications DC-DC Converters Power management funct.


Diodes DMP4015SPS

ions Analog Switch Pin1 Mechanical Dat a Case: POWERDI®5060-8 Case Material : Molded Plastic, “Green” Molding C ompound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Le vel 1 per J-STD-0 .


Diodes DMP4015SPS

.

Part

DMP4015SPS

Description

P-Channel MOSFET



Feature


NEW PRODUCT   Green DMP4015SPS 40V P- CHANNEL ENHANCEMENT MODE MOSFET POWERDI ® Product Summary V(BR)DSS -40V RDS (on) max 11mΩ @ VGS = -10V 15mΩ @ V GS = -4.5V ID TA = +25°C -17.0A -14.5 A Features and Benefits 100% Unclampe d Inductive Switch (UIS) Test In Produc tion Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Complian t (Notes 1 & 2) Halogen .
Manufacture

Diodes

Datasheet
Download DMP4015SPS Datasheet




 DMP4015SPS
  Green
DMP4015SPS
40V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
-40V
RDS(on) max
11m@ VGS = -10V
15m@ VGS = -4.5V
ID
TA = +25°C
-17.0A
-14.5A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test In Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Analog Switch
Pin1
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – 100% matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (approximate)
D
SD
SD
S DG
Top View
Bottom View
Ordering Information (Note 4 & 5)
GD
Top View
Pin Configuration
S
Internal Schematic
Notes:
Part Number
DMP4015SPS-13
DMP4015SPSQ-13
Compliance
Standard
Automotive
Case
POWERDI®5060-8
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
DDDD
Logo
P4015SP
Part no.
YY WW
SSS
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
Xth week: 01 ~ 53
Year: “1039” = 22001039
G
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated




 DMP4015SPS
DMP4015SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Steady
State
t<10s
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
IAS
EAS
Value
-40
±25
-8.5
-6.8
-13.0
-10.5
-11.0
-8.7
-17.0
-13.5
-100
-3.5
-22
242
Units
V
V
A
A
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.3
0.8
96.4
40.6
2.1
1.4
55.0
24.0
4.15
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-40

-1.5


Typ

-2.0
7
9
26
-0.7
4234
1036
526
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9
Max
-1
100
-2.5
11
15
-1.0


Unit Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -40V, VGS = 0V
nA VGS = 25V, VDS = 0V
V VDS = VGS, ID = -250A
m
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
S VDS = -20V, ID = -9.8A
V VGS = 0V, IS = -1A
pF
VDS = -20V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -20V, VGS = -5V
ID = -9.8A
ns
VGS = -10V, VDD = -20V, RG = 6,
ID = -1A, RL = 20
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated




 DMP4015SPS
30
25
20
15
10
5
0
0
0.02
-VGS=4.0V
-VGS=4.5V
-VGS=10V
-VGS=3.5V
-VGS=3.0V
0.5 1 1.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2
0.015
0.01
0.005
DMP4015SPS
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
-VGS= 4.5V
TA = 125C
TA = 150C
0.015
0.01
TA = 85C
TA = 25C
0.005
TA = -55C
00
1.6
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
1.4
1.2
0
0
0.02
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.016
-VGS = 4.5V
-ID = 5.0A
0.012
1
0.008
VGS = 10V
ID = 10A
0.8 0.004
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
3 of 6
www.diodes.com
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
November 2013
© Diodes Incorporated



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