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P-Channel MOSFET. DMP6350S Datasheet

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P-Channel MOSFET. DMP6350S Datasheet
















DMP6350S MOSFET. Datasheet pdf. Equivalent













Part

DMP6350S

Description

P-Channel MOSFET



Feature


DMP6350S 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RD S(ON) Max 350mΩ @ VGS = -10V 550mΩ @ VGS = -4.5V ID Max TA = +25°C -1.5A -1.2A Features and Benefits Low On-R esistance Low Input Capacitance Fast Switching Speed Low Input/Output Leaka ge Totally Lead-Free & Fully RoHS Comp liant (Notes 1 & 2) Halogen and Antimo ny Free. “Green” Device.
Manufacture

Diodes

Datasheet
Download DMP6350S Datasheet


Diodes DMP6350S

DMP6350S; (Note 3) Qualified to AEC-Q101 Standar ds for High Reliability Description an d Applications This MOSFET is designed to minimize the on-state resistance (RD S(ON)) and yet maintain superior switch ing performance, making it ideal for hi gh-efficiency power management applicat ions. Battery Charging Power Manageme nt Functions DC-DC Converters Portabl e Power Adaptors .


Diodes DMP6350S

Mechanical Data Case: SOT23 Case Mater ial: Molded Plastic, “Green” Moldin g Compound. UL Flammability Classificat ion Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Fini sh  Mat .


Diodes DMP6350S

.





Part

DMP6350S

Description

P-Channel MOSFET



Feature


DMP6350S 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RD S(ON) Max 350mΩ @ VGS = -10V 550mΩ @ VGS = -4.5V ID Max TA = +25°C -1.5A -1.2A Features and Benefits Low On-R esistance Low Input Capacitance Fast Switching Speed Low Input/Output Leaka ge Totally Lead-Free & Fully RoHS Comp liant (Notes 1 & 2) Halogen and Antimo ny Free. “Green” Device.
Manufacture

Diodes

Datasheet
Download DMP6350S Datasheet




 DMP6350S
DMP6350S
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-60V
RDS(ON) Max
350mΩ @ VGS = -10V
550mΩ @ VGS = -4.5V
ID Max
TA = +25°C
-1.5A
-1.2A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
D
D
Top View
G
S
Internal Schematic
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMP6350S-7
DMP6350S-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P35
P35 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2015
C
2016
D
Month
Code
Jan Feb Mar
123
DMP6350S
Document number: DS38474 Rev. 3 - 2
2017
E
2018
F
2019
G
2020
H
Apr May Jun
456
Jul Aug Sep
78
9
1 of 7
www.diodes.com
2021
I
2022
J
Oct Nov Dec
OND
May 2016
© Diodes Incorporated




 DMP6350S
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6), VGS = -10V
Steady
State
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMP6350S
Value
-60
±20
-1.5
-1.2
-6
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.72
176
1.17
108
34
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Min
-60
-
-
-1.0
-
Typ Max
--
- -1.0
- ±100
-1.8 -3.0
257 350
343 550
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD - -0.8 -1.2
Ciss - 206 -
Coss
- 15
-
Crss - 11 -
Rg - 17 -
Qg - 2.0 -
Qg - 4.1 -
Qgs - 0.5 -
Qgd - 0.8 -
tD(ON) - 3.6 -
tR - 3.8 -
tD(OFF) - 12.3 -
tF - 7.3 -
tRR - 8.2 -
QRR
- 2.7 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ VGS = -10V, ID = -0.9A
VGS = -4.5V, ID = -0.8A
V VGS = 0V, IS = -1A
pF
pF
VDS = -30V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -30V, ID = -0.9A
nC
ns
ns VDD = -30V, VGS = -10V,
ns ID = -1.0A, Rg = 6Ω
ns
ns IS = -1.0A, di/dt = -100A/μs
nC IS = -1.0A, di/dt = -100A/μs
DMP6350S
Document number: DS38474 Rev. 3 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated




 DMP6350S
DMP6350S
4.0
VGS = -10.0V
VGS = -4.5V
3.0
VGS = -4.0V
VGS = -3.5V
2.0
VGS = -3.0V
1.0
VGS = -2.5V
0.0
0
0.5
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
4
VDS = -5V
3.5
3
2.5
2
1.5
1 TA = 125oC
TA = 85oC
0.5 TA = 150oC
0
12
TA = 25oC
TA = -55oC
34
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
1
5
0.45
0.4
VGS = -4.5V
0.8
0.35 0.6
0.3
0.25
VGS = -10V
ID = -900mA
0.4
0.2
01234
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.2
0
4 8 12 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.6
VGS = -10V
0.5
0.4
150
125
85
2
1.8
1.6 VGS = -10V, ID = -900mA
1.4
0.3
25
0.2
-55
0.1
01234
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMP6350S
Document number: DS38474 Rev. 3 - 2
3 of 7
www.diodes.com
1.2
1 VGS = -4.5V, ID = -800mA
0.8
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
May 2016
© Diodes Incorporated




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