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P-Channel MOSFET. DMPH4015SK3Q Datasheet

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P-Channel MOSFET. DMPH4015SK3Q Datasheet
















DMPH4015SK3Q MOSFET. Datasheet pdf. Equivalent













Part

DMPH4015SK3Q

Description

P-Channel MOSFET



Feature


Green DMPH4015SK3Q 175°C P-CHANNEL ENHA NCEMENT MODE MOSFET Product Summary B VDSS -40V RDS(ON) Max 11m @ VGS = - 10V 15m @ VGS = -4.5V ID TC = +25° C -45A -40A Description and Applicatio ns This MOSFET has been designed to mee t the stringent requirements of automot ive applications. It is qualified to AE C-Q101, supported by a PPAP and is idea l for use in: Reverse P.
Manufacture

Diodes

Datasheet
Download DMPH4015SK3Q Datasheet


Diodes DMPH4015SK3Q

DMPH4015SK3Q; olarity Protection Motor Control Power Management Features and Benefits Rat ed to +175°C – Ideal for High Ambien t Temperature Environments 100% Unclam ped Inductive Switch (UIS) Test in Prod uction Low On-Resistance Fast Switchi ng Speed Lead-Free Finish; RoHS Compli ant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qua lified to AEC-Q101 Standa.


Diodes DMPH4015SK3Q

rds for High Reliability PPAP Capable ( Note 4) Mechanical Data Case: TO252 (D PAK) Case Material: Molded Plastic, Green‖ Molding Compound. UL Flammabi lity Classification Rating 94V-0 Moist ure Sensi .


Diodes DMPH4015SK3Q

.





Part

DMPH4015SK3Q

Description

P-Channel MOSFET



Feature


Green DMPH4015SK3Q 175°C P-CHANNEL ENHA NCEMENT MODE MOSFET Product Summary B VDSS -40V RDS(ON) Max 11m @ VGS = - 10V 15m @ VGS = -4.5V ID TC = +25° C -45A -40A Description and Applicatio ns This MOSFET has been designed to mee t the stringent requirements of automot ive applications. It is qualified to AE C-Q101, supported by a PPAP and is idea l for use in: Reverse P.
Manufacture

Diodes

Datasheet
Download DMPH4015SK3Q Datasheet




 DMPH4015SK3Q
Green DMPH4015SK3Q
175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-40V
RDS(ON) Max
11m@ VGS = -10V
15m@ VGS = -4.5V
ID
TC = +25°C
-45A
-40A
Description and Applications
This MOSFET has been designed to meet the stringent requirements
of automotive applications. It is qualified to AEC-Q101, supported by
a PPAP and is ideal for use in:
Reverse Polarity Protection
Motor Control
Power Management
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO252 (DPAK)
D
D
Top View
D
GS
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMPH4015SK3Q-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H4015S
YYWW
= Manufacturer’s Marking
. H4015S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMPH4015SK3Q
Document number: DS38125 Rev. 2 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated




 DMPH4015SK3Q
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 7)
Avalanche Current, L = 1mH (Note 8)
Avalanche Energy, L = 1mH (Note 8)
Steady
State
Steady
State
TC = +25°C
TC = +100°C
TA = +25°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMPH4015SK3Q
Value
-40
±25
-45
-35
-14
-10
-100
-5.5
-22
260
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.7
73
3.3
38
1.0
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-40

-1.5


Typ

-2
8
11
-0.7
4234
1036
526
7.8
42.7
91
14.2
13.5
13.2
10
303
138
26
20
Max
-1
100
-2.5
11
15
-1


Unit
V
µA
nA
V
m
V
pF
nC
ns
ns
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 25V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
VGS = 0V, IS = -1A
VDS = -20V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -20V,
ID = -9.8A
VGS = -10V, VDD = -20V,
RG = 6, ID = -1A
IF = -9.8A, di/dt = -100A/µs
IF = -9.8A, di/dt = -100A/µs
DMPH4015SK3Q
Document number: DS38125 Rev. 2 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated




 DMPH4015SK3Q
30.0
25.0
20.0
15.0
VGS=-3.5V
VGS=-4.0V
VGS=-4.5V
VGS=-5.0V
VGS=-10.0V
VGS=-3.0V
10.0
5.0
0.0
0
0.014
VGS=-2.5V
0.4 0.8 1.2 1.6
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.012
0.010
0.008
VGS=-4.5V
VGS=-10V
0.006
20
VDS=-5.0V
16
DMPH4015SK3Q
12
8
4
0
1
0.03
TA=125
TA=150
TA=175
TA=85
TA=25
TA=-55
1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4
0.025
0.02
0.015
0.01
ID=-9.8A
0.005
0.004
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.018
0.016
TA=175
TA=150
TA=125
0.014 TA=85
0.012
0.01
TA=25
0
0
1.8
1.6
5 10 15 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
VGS=-10V, ID=-9.8A
25
1.4
1.2
VGS=-4.5V, ID=-9.8A
1
0.008
TA=-55
0.8
0.006
VGS=-4.5V
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMPH4015SK3Q
Document number: DS38125 Rev. 2 - 2
3 of 7
www.diodes.com
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
April 2016
© Diodes Incorporated




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