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P-Channel MOSFET. DMPH6050SPDQ Datasheet

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P-Channel MOSFET. DMPH6050SPDQ Datasheet






DMPH6050SPDQ MOSFET. Datasheet pdf. Equivalent




DMPH6050SPDQ MOSFET. Datasheet pdf. Equivalent





Part

DMPH6050SPDQ

Description

P-Channel MOSFET



Feature


NEW PRODUCT DMPH6050SPDQ 175°C 60V DU AL P-CHANNEL ENHANCEMENT MODE MOSFET PO WERDI Product Summary Features BVDSS -60V RDS(ON) Max 48m @ VGS = -10V 60m @ VGS = -4.5V ID TC = +25°C -2 6A -23A Description and Applications T his MOSFET is designed to meet the stri ngent requirements of automotive applic ations. It is qualified to AEC-Q101, su pported by a PPAP and is.
Manufacture

Diodes

Datasheet
Download DMPH6050SPDQ Datasheet


Diodes DMPH6050SPDQ

DMPH6050SPDQ; ideal for use in: Rated to +175°C ideal for high ambient temperature en vironments 100% Unclamped Inductive Sw itching – ensures more reliable and r obust end application Low RDS(ON) – minimises power losses Low Qg – mini mises switching losses Totally Lead-Fr ee & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green Device (Note 3) Qualified to.


Diodes DMPH6050SPDQ

AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Engine Manage ment Systems Body Control Electronics DC-DC Converters Mechanical Data Cas e: PowerDI5060-8 (Type C) Case Materia l: Mol .


Diodes DMPH6050SPDQ

.

Part

DMPH6050SPDQ

Description

P-Channel MOSFET



Feature


NEW PRODUCT DMPH6050SPDQ 175°C 60V DU AL P-CHANNEL ENHANCEMENT MODE MOSFET PO WERDI Product Summary Features BVDSS -60V RDS(ON) Max 48m @ VGS = -10V 60m @ VGS = -4.5V ID TC = +25°C -2 6A -23A Description and Applications T his MOSFET is designed to meet the stri ngent requirements of automotive applic ations. It is qualified to AEC-Q101, su pported by a PPAP and is.
Manufacture

Diodes

Datasheet
Download DMPH6050SPDQ Datasheet




 DMPH6050SPDQ
DMPH6050SPDQ
175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features
BVDSS
-60V
RDS(ON) Max
48m@ VGS = -10V
60m@ VGS = -4.5V
ID
TC = +25°C
-26A
-23A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Rated to +175°C ideal for high ambient temperature
environments
100% Unclamped Inductive Switching ensures more reliable
and robust end application
Low RDS(ON) minimises power losses
Low Qg minimises switching losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
S1
D1 D1
D2
G1 D1
Top View
Pin1
Bottom View
S2
G2
Pin Out
Top View
D2 G1
D2
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMPH6050SPDQ-13
Case
PowerDI5060-8 (Type C)
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
PH6050SD
YY WW
= Manufacturer’s Marking
PH6050SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
S1 G1 S2 G2
PowerDI is a registered trademark of Diodes Incorporated.
DMPH6050SPDQ
Document number: DS38773 Rev.1 - 2
1 of 7
www.diodes.com
October 2016
© Diodes Incorporated




 DMPH6050SPDQ
DMPH6050SPDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 8) VGS = -10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current (Note 9) L = 0.1mH
Avalanche Energy (Note 9) L = 0.1mH
Steady
State
Steady
State
TA = +25°C
TA = +100°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-60
±20
-6.3
-4.4
-26
-18
-40
-2.0
-21
30
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
TA = +25°C
Steady state
t<10s
TA = +25°C
Steady state
t<10s
Symbol
PD
RJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.5
100
53
2.8
52
27
2.9
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max Unit
Test Condition
BVDSS -60 — —
V VGS = 0V, ID = -250μA
IDSS — — -1 µA VDS = -60V, VGS = 0V
IGSS
— — ±100 nA VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
-1.0 -3.0
36 48
44 60
-0.7 -1.2
1525
90
70
16
14.5
30.6
4.9
5.2
5.3
15.4
79.2
45.3
15.2
9.3
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
V VGS = 0V, IS = -1A
pF
pF
VDS = -30V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -30V, ID = -5A
nC
ns
ns VGS = -10V, VDS = -30V,
ns RG = 3Ω, ID = -5A
ns
ns IF = -5A, di/dt = -100A/μs
nC IF = -5A, di/dt = -100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMPH6050SPDQ
Document number: DS38773 Rev.1 - 2
2 of 7
www.diodes.com
October 2016
© Diodes Incorporated




 DMPH6050SPDQ
30.0
25.0
20.0
15.0
VGS = -10.0V
VGS = -4.0V
VGS = -5.0V
VGS = -4.5V
VGS = -3.5V
30
VDS= -5.0V
25
20
15
DMPH6050SPDQ
10.0
5.0
VGS = -3.0V
0.0 VGS = -2.8V
01234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
10
TJ= 175
5 TJ= 150
TJ= 125
0
TJ= 85
TJ= 25
TJ= -55
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.070
0.2
0.18
0.060
0.050
VGS = -4.5V
0.16
0.14
0.12
0.1
0.08
ID = -7A
ID = -5A
0.040
0.06
VGS = -10V
0.030
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.04
0.02
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.08
0.07
VGS= -10V
0.06
0.05
TJ= 175
TJ= 150
TJ= 125
TJ= 85
2.2
2
1.8 VGS = -10V, ID = -7.0A
1.6
1.4
0.04
0.03
0.02
TJ= 25
TJ= -55
1.2
VGS = -4.5V, ID = -7.0A
1
0.8
0.6
0.01
0 5 10 15 20 25 30
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMPH6050SPDQ
Document number: DS38773 Rev.1 - 2
3 of 7
www.diodes.com
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
October 2016
© Diodes Incorporated



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