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P-Channel MOSFET. DMPH3010LK3Q Datasheet

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P-Channel MOSFET. DMPH3010LK3Q Datasheet






DMPH3010LK3Q MOSFET. Datasheet pdf. Equivalent






DMPH3010LK3Q MOSFET. Datasheet pdf. Equivalent


DMPH3010LK3Q

Part

DMPH3010LK3Q

Description

P-Channel MOSFET



Feature


Green DMPH3010LK3Q 175°C P-CHANNEL ENHA NCEMENT MODE MOSFET Product Summary B VDSS -30V RDS(ON) max 7.5mΩ @ VGS = - 10V 10mΩ @ VGS = -4.5V ID TC = +25°C -50A -45A Description and Application s This MOSFET is designed to meet the s tringent requirements of Automotive app lications. It is qualified to AEC-Q101, supported up by a PPAP and is ideal fo r use in: DC-DC Conve.
Manufacture

Diodes

Datasheet
Download DMPH3010LK3Q Datasheet


Diodes DMPH3010LK3Q

DMPH3010LK3Q; rters Power Management Functions Rever se Polarity Protection Features and Be nefits Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switch (UIS) T est in Production Low On-resistance F ast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen a nd Antimony Free. “Green” Device (N ote 3) Qualified to AEC-.


Diodes DMPH3010LK3Q

Q101 Standards for High Reliability PPA P Capable (Note 4) Mechanical Data Cas e: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 9 4V-0 Moist .

Part

DMPH3010LK3Q

Description

P-Channel MOSFET



Feature


Green DMPH3010LK3Q 175°C P-CHANNEL ENHA NCEMENT MODE MOSFET Product Summary B VDSS -30V RDS(ON) max 7.5mΩ @ VGS = - 10V 10mΩ @ VGS = -4.5V ID TC = +25°C -50A -45A Description and Application s This MOSFET is designed to meet the s tringent requirements of Automotive app lications. It is qualified to AEC-Q101, supported up by a PPAP and is ideal fo r use in: DC-DC Conve.
Manufacture

Diodes

Datasheet
Download DMPH3010LK3Q Datasheet




 DMPH3010LK3Q
Green DMPH3010LK3Q
175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-30V
RDS(ON) max
7.5mΩ @ VGS = -10V
10mΩ @ VGS = -4.5V
ID
TC = +25°C
-50A
-45A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported up by
a PPAP and is ideal for use in:
DC-DC Converters
Power Management Functions
Reverse Polarity Protection
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO252 (DPAK)
D
D
G
Top View
D
GS
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMPH3010LK3Q-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H3010L
YYWW
= Manufacturer’s Marking
HYY30W1.W0L==DPartoedCucotdTeyMpearMkianrgking Code
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMPH3010LK3Q
Document number: DS38126 Rev. 1 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMPH3010LK3Q
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 8) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 9)
Avalanche Energy (Note 9)
Steady
State
Steady
State
TC = +25°C
TC = +100°C
TA = +25°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
DMPH3010LK3Q
Value
-30
±20
-50
-40
-16
-11
-100
-3.5
-47
113
Units
V
V
A
A
A
A
A
mJ
Value
2.0
73
3.9
38
1.0
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tF
tD(OFF)
tF
tRR
QRR
Min
-30
-1.1
Typ
-1.6
6.2
7.8
-0.65
6807
988
647
6.2
66
139
19.1
21.7
9.0
10.5
255
95
27
21
Max
-1.0
±100
-2.1
7.5
10
-1.0
Unit
Test Condition
V VGS = 0V, ID = -250µA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mΩ VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, ID = -10A
nC
ns
ns VDS = -15V, VGEN = -10V,
ns RG = 6Ω, ID = -1A
ns
ns IF = -10A, di/dt = -100A/μs
nC IF = -10A, di/dt = -100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMPH3010LK3Q
Document number: DS38126 Rev. 1 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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