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P-Channel MOSFET. DMPH3010LPSQ Datasheet

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P-Channel MOSFET. DMPH3010LPSQ Datasheet






DMPH3010LPSQ MOSFET. Datasheet pdf. Equivalent






DMPH3010LPSQ MOSFET. Datasheet pdf. Equivalent


DMPH3010LPSQ

Part

DMPH3010LPSQ

Description

P-Channel MOSFET



Feature


Green DMPH3010LPSQ 175°C P-CHANNEL ENHA NCEMENT MODE MOSFET POWERDI Product Su mmary BVDSS -30V RDS(ON) max 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V ID T C = +25°C -60A -50A Description and A pplications This MOSFET is designed to meet the stringent requirements of auto motive applications. It is qualified to AEC-Q101, supported by a PPAP and is i deal for use in: DC-DC .
Manufacture

Diodes

Datasheet
Download DMPH3010LPSQ Datasheet


Diodes DMPH3010LPSQ

DMPH3010LPSQ; Converters Power Management Functions Reverse Polarity Protection Features a nd Benefits Rated to +175°C – Ideal for High Ambient Temperature Environme nts 100% Unclamped Inductive Switch (U IS) Test in Production Low On-resistan ce Fast Switching Speed Lead-Free Fin ish; RoHS Compliant (Notes 1 & 2) Halo gen and Antimony Free. “Green” Devi ce (Note 3) Qualified to.


Diodes DMPH3010LPSQ

AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: PowerDI5060-8 Case Material: M olded Plastic, ―Green‖ Molding Comp ound. UL Flammability Classification Ra ting 94V-0 .

Part

DMPH3010LPSQ

Description

P-Channel MOSFET



Feature


Green DMPH3010LPSQ 175°C P-CHANNEL ENHA NCEMENT MODE MOSFET POWERDI Product Su mmary BVDSS -30V RDS(ON) max 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V ID T C = +25°C -60A -50A Description and A pplications This MOSFET is designed to meet the stringent requirements of auto motive applications. It is qualified to AEC-Q101, supported by a PPAP and is i deal for use in: DC-DC .
Manufacture

Diodes

Datasheet
Download DMPH3010LPSQ Datasheet




 DMPH3010LPSQ
Green DMPH3010LPSQ
175°C P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
-30V
RDS(ON) max
7.5m@ VGS = -10V
10m@ VGS = -4.5V
ID
TC = +25°C
-60A
-50A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
DC-DC Converters
Power Management Functions
Reverse Polarity Protection
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.097 grams (Approximate)
D
Top View
Bottom View
Pin1
G
S
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMPH3010LPSQ-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H3010LS
YY WW
= Manufacturer’s Marking
H3010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
SS SG
PowerDI is a registered trademark of Diodes Incorporated.
DMPH3010LPSQ
Document number: DS38128 Rev. 1 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMPH3010LPSQ
DMPH3010LPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 8) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 9)
Avalanche Energy (Note 9)
Steady
State
Steady
State
TC = +25°C
TC = +100°C
TA = +25°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-30
±20
-60
-40
-15
-11
-100
-3.5
-47
113
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.5
98
2.6
58
0.9
-55 to +175
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-30
-1.1
Typ
-1.6
5.7
7.2
-0.65
6807
988
647
6.2
66
139
19.1
21.7
9.0
10.5
255
95
27
21
Max
-1.0
±100
-2.1
7.5
10
-1.0
Unit
Test Condition
V VGS = 0V, ID = -250µA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mΩ VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, ID = -10A
nC
ns
ns VDS = -15V, VGEN = -10V,
ns RG = 6Ω, ID = -1A
ns
ns IF = -10A, di/dt = -100A/μs
nC IF = -10A, di/dt = -100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMPH3010LPSQ
Document number: DS38128 Rev. 1 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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