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N-Channel MOSFET. FCPF260N65FL1 Datasheet

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N-Channel MOSFET. FCPF260N65FL1 Datasheet






FCPF260N65FL1 MOSFET. Datasheet pdf. Equivalent






FCPF260N65FL1 MOSFET. Datasheet pdf. Equivalent


FCPF260N65FL1

Part

FCPF260N65FL1

Description

N-Channel MOSFET



Feature


FCPF260N65FL1 — N-Channel SuperFET® I I FRFET® MOSFET December 2014 FCPF26 0N65FL1 N-Channel SuperFET® II FRFET® MOSFET 650 V, 15 A, 260 mΩ Features • 700 V @TJ = 150°C • RDS(on) = 22 0 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 46 nC) • Low Effective Out put Capacitance (Typ. Coss(eff.) = 223 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / P.
Manufacture

Fairchild Semiconductor

Datasheet
Download FCPF260N65FL1 Datasheet


Fairchild Semiconductor FCPF260N65FL1

FCPF260N65FL1; DP TV • Telecom / Server Power Supplie s • Solar Inverter • AC - DC Powe r Supply Description SuperFET® II MOS FET is Fairchild Semiconductor’s bran d-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge per formance. This technology is tailored t o minimize conduction loss,.


Fairchild Semiconductor FCPF260N65FL1

provide superior switching performance, dv/dt rate and higher avalanche energy . Consequently, SuperFET II MOSFET is v ery suitable for the switching power ap plications such as PFC, server/telecom power, FPD TV power, ATX power a .

Part

FCPF260N65FL1

Description

N-Channel MOSFET



Feature


FCPF260N65FL1 — N-Channel SuperFET® I I FRFET® MOSFET December 2014 FCPF26 0N65FL1 N-Channel SuperFET® II FRFET® MOSFET 650 V, 15 A, 260 mΩ Features • 700 V @TJ = 150°C • RDS(on) = 22 0 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 46 nC) • Low Effective Out put Capacitance (Typ. Coss(eff.) = 223 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / P.
Manufacture

Fairchild Semiconductor

Datasheet
Download FCPF260N65FL1 Datasheet




 FCPF260N65FL1
December 2014
FCPF260N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 15 A, 260 mΩ
Features
• 700 V @TJ = 150°C
• RDS(on) = 220 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 46 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 223 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications. SuperFET II FRFET® MOSFET’s optimized body
diode reverse recovery performance can remove additional
component and improve system reliability.
D
GDS TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF260N65FL1
650
±20
±30
15
9.5
45
293
3
0.36
100
50
36
0.29
-55 to +150
300
FCPF260N65FL1
3.5
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2014 Fairchild Semiconductor Corporation
FCPF260N65FL1 Rev. C1
1
www.fairchildsemi.com




 FCPF260N65FL1
Package Marking and Ordering Information
Part Number
FCPF260N65FL1
Top Mark
FCPF260N65F
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 1.5 mA
VGS = 10 V, ID = 7.5 A
VDS = 20 V, ID = 7.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 380 V, ID = 7.5 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
650
700
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.72
-
40
-
-
220
14.2
1760
59
1.0
34
223
46
9.6
20
0.52
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 7.5 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 7.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 7.5 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 3 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD 7.5 A, di/dt 200 A/μs, VDD 380 V, Starting TJ = 25°C
4. Essentially independent of operating temperature.
(Note 4)
-
-
-
-
-
-
-
-
-
21.7
10.5
54
5.8
-
-
-
98
450
Quantity
50 units
Max. Unit
-
-
-
10
-
±100
V
V
V/oC
μA
μA
5V
260 mΩ
-S
2340
80
-
-
-
60
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
54 ns
32 ns
118 ns
22 ns
15 A
45 A
1.2 V
- ns
- nC
©2014 Fairchild Semiconductor Corporation
FCPF260N65FL1 Rev. C1
2
www.fairchildsemi.com



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