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MOSFET CONTROLLER. ZXGD3110N8 Datasheet

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MOSFET CONTROLLER. ZXGD3110N8 Datasheet






ZXGD3110N8 CONTROLLER. Datasheet pdf. Equivalent




ZXGD3110N8 CONTROLLER. Datasheet pdf. Equivalent





Part

ZXGD3110N8

Description

SYNCHRONOUS MOSFET CONTROLLER



Feature


Description The ZXGD3110N8 is intended t o drive a MOSFET configured as an ideal diode replacement. The device is compr ised of a high voltage detector stage a nd gate driver. The detector monitors t he voltage between the drain and the so urce of the MOSFET and if this voltage is less than the turn on threshold volt age of the controller a positive voltag e is applied to th.
Manufacture

Diodes

Datasheet
Download ZXGD3110N8 Datasheet


Diodes ZXGD3110N8

ZXGD3110N8; e MOSFET’s Gate Pin. As the load curre nt decays to zero and the voltage betwe en the drain and source of the MOSFET i ncreases beyond the turn-off threshold value MOSFET is rapidly turned off. Int elligent features of this IC are the Mi nimum Off-Time (TOFF) and Minimum On-Ti me (TON), these features blanket the no ise generated during the turn-on and tu rn-off instances of .


Diodes ZXGD3110N8

the power FET. Also Light Load Detection (LLD) for improved efficiency at light and no load, where synchronous rectifi cation is no more beneficial. Other fea tures include Undervoltage Lockout (UVL O), SYNC feature for CCM operation and low turn-off threshold .


Diodes ZXGD3110N8

.

Part

ZXGD3110N8

Description

SYNCHRONOUS MOSFET CONTROLLER



Feature


Description The ZXGD3110N8 is intended t o drive a MOSFET configured as an ideal diode replacement. The device is compr ised of a high voltage detector stage a nd gate driver. The detector monitors t he voltage between the drain and the so urce of the MOSFET and if this voltage is less than the turn on threshold volt age of the controller a positive voltag e is applied to th.
Manufacture

Diodes

Datasheet
Download ZXGD3110N8 Datasheet




 ZXGD3110N8
Description
The ZXGD3110N8 is intended to drive a MOSFET configured as an
ideal diode replacement. The device is comprised of a high voltage
detector stage and gate driver. The detector monitors the voltage
between the drain and the source of the MOSFET and if this voltage is
less than the turn on threshold voltage of the controller a positive
voltage is applied to the MOSFET’s Gate Pin. As the load current
decays to zero and the voltage between the drain and source of the
MOSFET increases beyond the turn-off threshold value MOSFET is
rapidly turned off.
Intelligent features of this IC are the Minimum Off-Time (TOFF) and
Minimum On-Time (TON), these features blanket the noise generated
during the turn-on and turn-off instances of the power FET. Also Light
Load Detection (LLD) for improved efficiency at light and no load,
where synchronous rectification is no more beneficial. Other features
include Undervoltage Lockout (UVLO), SYNC feature for CCM
operation and low turn-off threshold voltage for improved efficiency.
Applications
Flyback Converters in:
Power Adaptors
Auxiliary Power Supplies
PoE Power Devices
Resonant Converters in:
High Power Adaptors
85+/90+ Compliant ATX and Server Power Supplies
ZXGD3110N8
SYNCHRONOUS MOSFET CONTROLLER IN SO-8
Features
Frequency of Operation up to 500kHz
Suitable for Discontinuous Conduction Mode (DCM),
Continuous Conduction Mode (CCM) and Critical (CrCM)
Conduction Mode
Minimum On-Time and Off-Time to Reduce Turn-On/Off
Oscillations
Intelligent Light Load Detection and Sleep Mode
Turn-Off Propagation Delay Time 30ns
Drain Voltage Rating of 200V
Recommended Operating Voltage from 4.5V up to 12V
Source and Sink Current of 2A and 4A Respectively
Low Component Count
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
Top View
VCC
TON
VS
VD
Top View
Pin-Out
GND
SYNC
GATE
PGATE
Ordering Information (Note 4)
Product
ZXGD3110N8TC
Marking
ZXGD3110
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
ZXGD3110N8
Document Number DS37336 Rev. 1 - 2
1 of 11
www.diodes.com
December 2015
© Diodes Incorporated




 ZXGD3110N8
Marking Information
ZXGD3110N8
ZXGD
3110
YY WW
ZXGD = Product Type Marking Code, Line 1
3110 = Product Type Marking Code, Line 2
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
Functional Block Diagram
ZXGD3110N8
Document Number DS37336 Rev. 1 - 2
2 of 11
www.diodes.com
December 2015
© Diodes Incorporated




 ZXGD3110N8
ZXGD3110N8
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
Pin Name
VCC
TON
VS
VD
PGATE
GATE
SYNC
GND
Function
Power Supply Pin
VCC supplies all the internal circuitry of the device. A DC supply is required to be connected to this pin. A
10µF or larger capacitor must be connected between this pin and GND Pin as close as possible. The
device will not function until the VCC has risen above the UVLO threshold. The device can safely be turned
off by bringing VCC below the UVLO threshold (minus the UVLO threshold hysteresis). If VCC drops below
the UVLO threshold (minus UVLO threshold hysteresis), the MOSFET is turned off and the TOFF/ON Pin is
internally connected to GND.
Minimum On-Time
Minimum on-time setting pin. Connect this pin to Ground via RTON resistor.
Source Voltage
Connect this pin to the source of the synchronous MOSFET.
Drain Voltage
This pin needs to be connected as closely as possible to the transformer used in the application, to
minimize the effects of parasitic inductance on the performance of the device. The device requires that VD
has a voltage greater than 1.5V and that the TOFF timer has expired before the MOSFET is able to be
activated. Once these conditions are met and the voltage sensed on the VD Pin is 150mV lower than the VS
Pin, the gate output to the sync MOSFET will go high and the TON (minimum on-time) period is started. The
MOSFET will remain on for at least the length of the minimum on-time. After the TON period, the MOSFET
will remain on until the VD to VS voltage has reached to the VTHOFF threshold, at which point the gate output
will go low. If the VTHOFF threshold is reached before the TON period has expired, the device will enter the
Light Load Mode. Under this mode, the MOSFET will not be turned on the next switching cycle. The device
will come out of light load, once the on-time of the synchronous MOSFET exceeds the set minimum on-
time.
Protection MOSFET Gate
A 100nF capacitor should be connected between this pin and GND.
Gate
Connect GATE to the gate of the controlled MOSFET through a small series resistor using short PC board
tracks to achieve optimal switching performance. The gate output can source >2A peak source current
while turning on the sync MOSFET and can sink >4A peak current while turning on the sync MOSFET.
Gate Turn-Off Synchronization
If a falling edge is sensed on this pin, the gate output is pulled low, irrespective of the sensed drain to
source voltage or the state of the TON timer. This characteristic allows the device to be easily used in a
Continuous Conduction Mode (CCM) system. The SYNC Pin needs to be connected to a suitable control
signal on the primary side of the convertor, using a high voltage isolation cap, transformer or other suitable
means.
Ground
This is the reference potential for all internal comparators and thresholds. A 10µF decoupling capacitor is
required to place as close as possible between VCC and GND Pins.
ZXGD3110N8
Document Number DS37336 Rev. 1 - 2
3 of 11
www.diodes.com
December 2015
© Diodes Incorporated



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