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WFD5N65L Product Description
Silicon N-Channel MOSFET
Features
� 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
D
G S
GD S
TO-252
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM VGS EAS EAR dv/dt
PD
Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diod.