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WFD5N50 Dataheets PDF



Part Number WFD5N50
Manufacturers Winsemi
Logo Winsemi
Description Silicon N-Channel MOSFET
Datasheet WFD5N50 DatasheetWFD5N50 Datasheet (PDF)

Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe cially well suited fo.

  WFD5N50   WFD5N50



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Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Total Power Dissipation(.


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