WFU5N60

HIGH VOLTAGE N-Channel MOSFET      WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested     TO‐252          TO‐251    G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds WFU/D5N60 600 4.5 1.8 ±30 240 4 44 -55 ~ +150 300 Units V A A V mJ A W ℃ ℃ Thermal Characteristics  Symbol Parameter Typ. RθJC Thermal Resist...