WFF10N65L

WFF10N65L Product Description Silicon N-Channel MOSFET Features � 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V � Ultra-low Gate charge(Typical 32nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ TJ,Tstg Junction and Stor...