WFF18N50L Product Description
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.31Ω)@VGS=10V Ultra-low Gate charge(Typical 37.9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest techno...
