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WFF5N60 Datasheet, Equivalent, N-Channel MOSFET.HIGH VOLTAGE N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET |
| Part | WFF5N60 |
|---|---|
| Description | HIGH VOLTAGE N-Channel MOSFET |
| Feature | HIGH VOLTAGE N-Channel MOSFET WFF5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy . |
| Manufacture | Wisdom technologies |
| Datasheet |
| Part | WFF5N60 |
|---|---|
| Description | HIGH VOLTAGE N-Channel MOSFET |
| Feature | HIGH VOLTAGE N-Channel MOSFET WFF5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy . |
| Manufacture | Wisdom technologies |
| Datasheet |
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