HIGH VOLTAGE N-Channel MOSFET
HIGH VOLTAGE N-Channel MOSFET
WFF5N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Swi...
Description
HIGH VOLTAGE N-Channel MOSFET
WFF5N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested
GD S
D
G
S
TO‐220F
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS EAS IAR PD TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
WFF5N60
600 4.5* 1.8* ±30 240
4 100 -55 ~ +150
300
Units
V A A V mJ A W ℃
℃
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance,Junction to Cas...
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