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WFF5N60B Datasheet, Equivalent, N-Channel MOSFET.Silicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part | WFF5N60B |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | WFF5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high eff. |
| Manufacture | Winsemi |
| Datasheet |
| Part | WFF5N60B |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | WFF5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high eff. |
| Manufacture | Winsemi |
| Datasheet |
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