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WFF8N60B Datasheet, Equivalent, N-Channel MOSFET.

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET


Part WFF8N60B
Description Silicon N-Channel MOSFET
Feature WFF8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a el.
Manufacture Winsemi
Datasheet
Download WFF8N60B Datasheet
Part WFF8N60B
Description Silicon N-Channel MOSFET
Feature WFF8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a el.
Manufacture Winsemi
Datasheet
Download WFF8N60B Datasheet

WFF8N60B

WFF8N60B

WFF8N60B   WFF8N60B



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