WFF9N90

WFF9N90 Product Description Silicon N-Channel MOSFET Features � 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dis...