WFP8N60B Product Description
Silicon N-Channel MOSFET
Features
� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDM...
