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BAT54H

ON Semiconductor

Schottky Barrier Diodes

Schottky Barrier Diodes BAT54H These Schottky barrier diodes are designed for high speed switching applications, circuit...


ON Semiconductor

BAT54H

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Description
Schottky Barrier Diodes BAT54H These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc Device Marking: JV NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Forward Current (DC) Non−Repetitive Peak Forward Current, tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range 1. FR−4 Minimum Pad Symbol PD IF IFSM IFRM RqJA TJ, Tstg Max 200 1.6 200 Max 600 300 635 −55 to150 Unit mW mW/°C mA mA mA °C/W °C DATA SHEET www.onsemi.com 30 VOLT SILICON HOT−CARRIER DETEC...




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