WFD20N06

WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol Parameter V DSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed tp=10us VGS Gate to Source Voltage-Continuous VGS Gate to Source Voltage-Non-Repetitive(tp<10us) EAS Single Pulsed Avalanche Energy Is Source Current (Body Diode) PD Total Power Dissipation(@Tc=25℃) TJ, Tstg Junction an...