SCT2450KE

SCT2450KE N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 450mΩ 10A 85W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication Solar inverters DC/DC converters Induction heating Motor drives lOutline TO-247 TO-247N lInner circuit (1) (2) (3) (1) Gate (2) Drain (3) Source *1 Body Diode lPackaging specifications*1 Package Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking TO-247 TO-247N Tube - - 30 C C11 SCT2450KE lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *2 ID *2 ID,pulse *3 VGSS VGSS-surge*4 PD Tj Tstg Value 1200 10 7 25 -6 to 22 -10 to 26 85 175 -55 to +175 Unit V A A A V V W °C °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 TSQ50210-SCT2450KE 22.Feb.2019 - Rev.002 SCT2450KE lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Datasheet Values Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - - V Zero gate voltage drain current Gate - Source leakage current Gate - Source leakage current Gate threshold v...