POWER MOSFET
VDS RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
20 0.045
8.0 4.2
V Ω nC A
IRLML2502PbF-1
HEXFET® Power MOS...
Description
VDS RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
20 0.045
8.0 4.2
V Ω nC A
IRLML2502PbF-1
HEXFET® Power MOSFET
G1 S2
3D
Micro3™(SOT-23)
Features Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number IRLML2502TRPbF-1
Package Type Micro3™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number IRLML2502TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter Maximum Ju...
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