Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
30 0.10
0.20 6.4 3.2
V
Ω nC A
Fea...
Description
VDS RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
30 0.10
0.20 6.4 3.2
V
Ω nC A
Features Industry-standard pinout Micro-6 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
IRLMS1503PbF-1
HEXFET® Power MOSFET
D1
A 6D
D2
5D
G3
4S
Top View
Micro6™
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number IRLMS1503TRPbF-1
Package Type Micro6™
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number IRLMS1503TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ, TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 3.2 2.6 18 1.7 13 ± 20 5.0
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