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SBAT54SLT1G Data Sheet

Dual Series Schottky Barrier Diodes

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SBAT54SLT1G
BAT54SLT1G, SBAT54SLT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc  AEC Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C VR 30 V PF 225 mW 1.8 mW/C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Square pulse = 1 sec IF IFSM 200 Max 600 1.0 mA mA A Repetitiv.
SBAT54SLT1G

Download SBAT54SLT1G Datasheet
BAT54SLT1G, SBAT54SLT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc  AEC Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C VR 30 V PF 225 mW 1.8 mW/C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Square pulse = 1 sec IF IFSM 200 Max 600 1.0 mA mA A Repetitiv.


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