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MB85RS16N Dataheets PDF



Part Number MB85RS16N
Manufacturers Fujitsu
Logo Fujitsu
Description 16K (2K x 8) Bit SPI
Datasheet MB85RS16N DatasheetMB85RS16N Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00030-3v0-E 16 K (2 K × 8) Bit SPI MB85RS16N ■ DESCRIPTION MB85RS16N is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS16N adopts the Serial Peripheral Interface (SPI). The MB85RS16N is able to retain data without using a back-up battery, as is needed for SRAM. The memory cell.

  MB85RS16N   MB85RS16N



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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00030-3v0-E 16 K (2 K × 8) Bit SPI MB85RS16N ■ DESCRIPTION MB85RS16N is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS16N adopts the Serial Peripheral Interface (SPI). The MB85RS16N is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS16N can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS16N does not take long time to write data like Flash memories or E2PROM, and MB85RS16N takes no wait time. ■ FEATURES • Bit configuration : 2,048 words × 8 bits • Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) • Operat.


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