Power MOSFET
WFD4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fa...
Description
WFD4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology. This latest technology has Been Especially designed to minimize on-state resistance,
have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃) PD
Derating Factor above 25℃
...
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