www.vishay.com
SiC632, SiC632A
Vishay Siliconix
50 A VRPower® Integrated Power Stage
DESCRIPTION The SiC632 and SiC63...
www.vishay.com
SiC632, SiC632A
Vishay Siliconix
50 A VRPower® Integrated Power Stage
DESCRIPTION The SiC632 and SiC632A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm x 5 mm MLP package, SiC632 and SiC632A enables voltage
regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilizes Vishay’s state-of-the-art Gen IV TrenchFET® technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC632 and SiC632A incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap
Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detection to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V (SiC632A), 5 V (SiC632) PWM logic.
TYPICAL APPLICATION DIAGRAM
FEATURES Thermally enhanced PowerPAK® MLP55-31L
package Vishay’s Gen IV MOSFET technology and a low
side MOSFET with integrated
Schottky diode Delivers up to 50 A continuous current High efficiency performance High frequency operation up to 1.5 MHz Power MOSFETs optimized for 19 V input stage 3.3 V (SiC632A), 5 V (SiC632) PWM logic with tri-state and
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