SiHA21N60EF

www.vishay.com SiHA21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single 0.176 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x Qg Low input capacitance (Ciss) Increased robustness due to low Qrr Available Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications - Server and telecom power supplies Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) Consumer and computing - ATX power supplies Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge Thin-Lead TO-220 FULLPAK SiHA21N60EF-E3 SiHA21N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 °C) Pulsed drain current a VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear derating factor Single pu...