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SiHA22N60E

Vishay

E Series Power MOSFET

www.vishay.com SiHA22N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MO...


Vishay

SiHA22N60E

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www.vishay.com SiHA22N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max (). at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 86 11 24 Single 0.18 FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-Intensity discharge (HID) - Fluorescent ballast lighting Consumer - Adaptors - Televisions - Game console Computing - Adaptors - ATX power supply ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK SiHA22N60E-E3 SiHA22N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering recommendations (peak temperature) c for 10 s Mounting torque M3 screw No...




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