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SiHG28N65EF Dataheets PDF



Part Number SiHG28N65EF
Manufacturers Vishay
Logo Vishay
Description E Series Power MOSFET
Datasheet SiHG28N65EF DatasheetSiHG28N65EF Datasheet (PDF)

www.vishay.com SiHG28N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 146 21 43 Single TO-247AC 0.102 D S D G G S N-Channel MOSFET FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate char.

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www.vishay.com SiHG28N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 146 21 43 Single TO-247AC 0.102 D S D G G S N-Channel MOSFET FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (SMPS) • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-247AC SiHG28N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor Single pulse avalanche Energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c VGS at 10 V TC = 25 °C TC = 100 °C TJ = 125 °C for 10 s VDS VGS ID IDM EAS PD TJ, Tstg dV/dt Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.5 A c. 1.6 mm from case d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C LIMIT 650 ± 30 28 18 87 2 427 250 -55 to +150 70 11 300 UNIT V A W/°C mJ W °C V/ns °C S18-0016-Rev. B, 15-Jan-18 1 Document Number: 91708 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SiHG28N65EF Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient Maximum junction-to-case (drain) SYMBOL RthJA RthJC TYP. - MAX. 62 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VDS/TJ VGS(th) VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 10 mA VDS = VGS, ID = 250 μA Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance a IGSS IDSS RDS(on) gfs VGS = ± 20 V VGS = ± 30 V VDS = 520 V, VGS = 0 V VDS = 520 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 14 A VDS = 30 V, ID = 14 A Dynamic Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related a Effective output capacitance, time related b Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics Ciss Coss Crss Co(er) Co(tr) Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 0 V, VDS = 100 V, f = 1 MHz VGS = 0 V, VDS = 0 V to 520 V VGS = 10 V ID = 14 A, VDS = 520 V VDD = 520 V, ID = 14 A Rg = 9.1 , VGS = 10 V f = 1 MHz, open drain MIN. 650 - 2.0 - - - 0.25 Continuous source-drain diode current Pulsed diode forward current IS MOSFET symbol showing the  integral reverse ISM p - n junction diode D G S - Diode forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current VSD trr Qrr IRRM TJ = 25 °C, IS = 11 A, VGS = 0 V TJ = 25 °C, IF = IS = 14 A, dI/dt = 100 A/μs, VR = 400 V - Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS TYP. MAX. UNIT 0.74 0.102 11 4.0 ± 100 ±1 1 500 0.117 - V V/°C V nA μA μA  S 3249 145 5 105 441 97 21 43 29 44 93 51 0.5 - - 146 58 88 140 102 1.0 pF nC ns  - 28 A - 87 0.9 1.2 V 174 308 ns 1.1 2.4 μC 15 - A S18-0016-Rev. B, 15-Jan-18 2 Document Number: 91708 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SiHG28N65EF Vishay Siliconix ID, Drain-to-Source Current (A) 100 75 50 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V TJ = 25 °.


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