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SiHG28N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
146 21 43 Single
TO-247AC
0.102 D
S
D G
G
S N-Channel MOSFET
FEATURES • Fast body diode MOSFET using E series
technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS • Telecommunications
- Server and telecom power supplies • Lighting
- High intensity discharge (HID) - Light emitting diodes (LEDs) • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (SMPS) • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
TO-247AC SiHG28N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current a Linear derating factor Single pulse avalanche Energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c
VGS at 10 V
TC = 25 °C TC = 100 °C
TJ = 125 °C for 10 s
VDS VGS
ID
IDM
EAS PD TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.5 A c. 1.6 mm from case d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C
LIMIT 650 ± 30 28 18 87 2 427 250
-55 to +150 70 11 300
UNIT V
A
W/°C mJ W °C V/ns °C
S18-0016-Rev. B, 15-Jan-18
1
Document Number: 91708
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SiHG28N65EF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum junction-to-ambient Maximum junction-to-case (drain)
SYMBOL RthJA RthJC
TYP. -
MAX. 62 0.5
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N)
VDS VDS/TJ VGS(th)
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 10 mA
VDS = VGS, ID = 250 μA
Gate-source leakage
Zero gate voltage drain current Drain-source on-state resistance Forward transconductance a
IGSS
IDSS RDS(on)
gfs
VGS = ± 20 V
VGS = ± 30 V
VDS = 520 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 14 A
VDS = 30 V, ID = 14 A
Dynamic
Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related a Effective output capacitance, time related b Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics
Ciss Coss Crss
Co(er)
Co(tr) Qg Qgs Qgd td(on) tr td(off) tf Rg
VGS = 0 V, VDS = 100 V,
f = 1 MHz
VGS = 0 V, VDS = 0 V to 520 V
VGS = 10 V
ID = 14 A, VDS = 520 V
VDD = 520 V, ID = 14 A Rg = 9.1 , VGS = 10 V
f = 1 MHz, open drain
MIN.
650 -
2.0 -
-
-
0.25
Continuous source-drain diode current Pulsed diode forward current
IS MOSFET symbol showing the integral reverse
ISM p - n junction diode
D
G S
-
Diode forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current
VSD trr Qrr IRRM
TJ = 25 °C, IS = 11 A, VGS = 0 V
TJ = 25 °C, IF = IS = 14 A, dI/dt = 100 A/μs, VR = 400 V
-
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYP. MAX. UNIT
0.74
0.102 11
4.0 ± 100 ±1 1 500 0.117 -
V V/°C
V nA μA
μA
S
3249 145
5
105
441 97 21 43 29 44 93 51 0.5
-
-
146
58 88 140 102 1.0
pF
nC ns
- 28 A
- 87
0.9 1.2
V
174 308 ns
1.1 2.4 μC
15 - A
S18-0016-Rev. B, 15-Jan-18
2
Document Number: 91708
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHG28N65EF
Vishay Siliconix
ID, Drain-to-Source Current (A)
100 75 50
TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V
BOTTOM 5 V
TJ = 25 °.