MDF1922

MDF1922 – Single N-Channel Trench MOSFET 100V MDF1922 Single N-channel Trench MOSFET 100V, 40A, 8.7mΩ General Description The MDF1922 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1922 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 8.7 mΩ @VGS = 10V  100% UIL Tested D G D S TO-220F Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy TC=25oC TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2015. Rev 1.0 1 G S Symbol VDSS VGSS ID IDM PD EAS(2) TJ, Tstg Symbol Rθ...