Transistors
Power Transistor (−80V, −4A)
2SA2017
!Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excel...
Transistors
Power
Transistor (−80V, −4A)
2SA2017
!Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO
IC
PC Tj Tstg
Limits -80 -80 -5 -4 -6 30 150
-55~+150
Unit V V V A
A(Pulse) W(Tc = 25°C)
°C °C
2SA2017
!Packaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SA2017 TO-220FN
E 500
!Electrical characteristics (Ta = 25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer rat...
