RB088B150

RB088B150 Data Sheet Schottky Barrier Diode RB088B150 lApplications Switching power supply lFeatures 1)Cathode common dual type 2)Low IR 3)High reliability 4)AEC-Q101 qualified lConstruction Silicon epitaxial lExternal Dimensions(Unit : mm) C0.5 6.5±0.2 5.1±0.2 0.1 2.3±0.2 0.1 0.5±0.1 lLand Size Figure(Unit : mm) 6.0 5.5±0. 1.5±0.3 3 0.8 min 2.5 9.5±0.5 3.0 2.0 6.0 1 0.9 (1) (2) (3) 0.75 0.65±0.1 2.3±0.2 2.3±0.2 ROHM : CPD JEITA : SC-63 1 Manufacture 0.5±0.1 1.0±0.2 1.6 1.6 CPD 2.3 2.3 lStructure lTaping Dimensions(Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 φ 1.55±0.1 　　　　　 0 0.4±0.1 2.5±0.1 TL 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 φ 3.0±0.1 lAbsolute Maximum Ratings(Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive) Reverse voltage (DC) VRM 150 VR 150 Average rectified forward current (*1) Io 10 Forward current surge peak (60Hz・1cyc)(*2) IFSM 50 Junction temperature Tj...