RB088BM150

Schottky Barrier Diode RB088BM150 lApplication Switching power supply lDimensions (Unit : mm) Data Sheet lLand size figure (Unit : mm) 6.0 3.0 2.0 6.0 lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Super low IR lConstruction Silicon epitaxial planar type 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date lTaping specifications (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStructure (2) Cathode (1) (3) Anode Anode lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Limits Unit Conditions Repetitive Peak Reverse Voltage VRM 150 V Duty≦0.5 Reverse Voltage Average forward rectified current Non-repetitive Forward Current Surge Peak Operating Junction Temperature VR Io IFSM Tj 150 V Direct Reverse Voltage 10 A 60Hz half sin Wave resistive load, Tc=100°C max., 1/2 Io per diode 50 A 60Hz half sin wave, Non-repetitive at Ta=25ºC, per diode 150 °C - Storage Temperature Tstg -55 to +150 °C - lElectrical characteristics (T...