Document
Schottky Barrier Diode
RB088T150FH
Application Switching power supply
Features 1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified
(Limited to HR Type)
External dimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
1 1.2
Datasheet
AEC-Q101 Qualified
Structure
(2)
(1) (3) (1) Anode (2) Cathode (3) Anode
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
Construction Silicon epitaxial planar
1.3
0.8 (1) (2) (3) 2.54±0.5
0.07.75±0.1 0.05
2.6±0.5
ROHM : TO220FN 1 Manufacture Date
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM VR Io
150 150 10
Forward current surge peak (60Hz・1cyc)(*2) Junction temperature
IFSM Tj
50 150
Storage temperature
Tstg
55 to 150
(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave
(*2) Per Diode.
Unit V V A A .