RB160SS-30

Schottky Barrier Diode RB160SS-30 lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand Size Figure (Unit : mm) 0.8 1.6±0.05 0.4±0.05 1.2±0.05 0.5 1.2 lFeatures 1) Small power mold type (KMD2) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type AF 0～0.03 0.8±0.05 0.6±0.03 ROHM : KMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.7±0.05 lTaping Dimensions (Unit : mm) KMD2 lStructure (1) Cathode (2) Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 30 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 30 1 5 150 V A A °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (...