AUIRF4905L

  AUTOMOTIVE GRADE Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  150°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRF4905S AUIRF4905L VDSS HEXFET® Power MOSFET -55V RDS(on) max. 20m ID (Silicon Limited) -70A ID (Package Limited) -42A DD S G D2Pak AUIRF4905S S GD TO-262 AUIRF4905L G Gate D Drain S Source Base part number AUIRF4905L AUIRF4905S Package Type TO-262 D2-P...