BD934F

isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933F/935F/937F/939F/941F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD934F -45 BD936F -60 VCBO Collector-Base Voltage BD938F -100 BD940F -120 BD942F -140 BD934F -45 BD936F -60 VCEO Collector-Emitter Voltage BD938F -80 BD940F -100 BD942F -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -3 ICM Collector Current-Peak -7 IB Base Current-Continuous -0.5 PC Collector Power Dissipation @ TC=25℃ 19 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD934F VCEO(SUS) Collector-Emitter Sustaining Voltage BD936F BD938F IC= -30mA ; IB= 0 BD940F BD942F VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A Base-Emit...